TC74HC04AP/AF
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74HC04AP, TC74HC04AF
Hex Inverter
The TC74HC04A is a high speed CMOS INVERTER fabricated
2 TC74HC04AP
with silicon gate C MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 3 stages, including buffered
output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against satic
discharge or transient excess voltage.
Features
TC74HC04AF
High speed: t = 6 ns (typ.) at V = 5 V
pd CC
Low power dissipation: I = 1 A (max) at Ta = 25C
CC
High noise immunity: V = V = 28% V (min)
NIH NIL CC
Output drive capability: 10 LSTTL loads
Symmetrical output impedance: |I | = I = 4 mA (min)
OH OL
Balanced propagation delays: t t
pLH pHL
Wide operating voltage range: V (opr) = 2 to 6 V
CC
Pin and function compatible with 74LS04
Weight
Pin Assignment
DIP14-P-300-2.54 : 0.96 g (typ.)
SOP14-P-300-1.27A : 0.18 g (typ.)
IEC Logic Symbol
Start of commercial production
1986-05
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Truth Table
A Y
L H
H L
Absolute Maximum Ratings (Note 1)
Characteristics Symbol Rating Unit
Supply voltage range V 0.5 to 7 V
CC
DC input voltage V 0.5 to V + 0.5 V
IN CC
DC output voltage V 0.5 to V + 0.5 V
OUT CC
Input diode current I 20 mA
IK
Output diode current I 20 mA
OK
DC output current I 25 mA
OUT
DC V /ground current I 50 mA
CC CC
Power dissipation P 500 (DIP) (Note 2)/180 (SOP) mW
D
Storage temperature T 65 to 150 C
stg
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = 40 to 65C. From Ta = 65 to 85C a derating factor of 10 mW/C shall be
applied until 300 mW.
Operating Ranges (Note)
Characteristics Symbol Rating Unit
Supply voltage V 2 to 6 V
CC
Input voltage V 0 to V V
IN CC
Output voltage V 0 to V V
OUT CC
Operating temperature T 40 to 85 C
opr
0 to 1000 (V = 2.0 V)
CC
Input rise and fall time t , t 0 to 500 (V = 4.5 V) ns
r f CC
0 to 400 (V = 6.0 V)
CC
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V or GND.
CC
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