TC74VHCT08AFT(EL,K) Toshiba

TC74VHCT08AF/AFT/AFK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHCT08AF, TC74VHCT08AFT, TC74VHCT08AFK Quad 2-Input AND Gate TC74VHCT08AF The TC74VHCT08A is an advanced high speed CMOS 2 2-INPUT AND GATE fabricated with silicon gate C MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The input voltage are compatible with TTL output voltage. This device may be used as a level converter for interfacing 3.3 V to 5 V system. TC74VHCT08AFT Input protection and output circuit ensure that 0 to 5.5 V can (Note) be applied to the input and output pins without regard to the supply voltage. These structure prevents device destruction due to mismatched supply and input/output voltages such as battery back up, hot board insertion, etc. Note: V = 0 V CC Features TC74VHCT08AFK High speed: t = 5.0 ns (typ.) at V = 5 V pd CC Low power dissipation: I = 2 A (max) at Ta = 25C CC Compatible with TTL inputs: V = 0.8 V (max) IL V = 2.0 V (min) IH Power down protection is provided on all inputs and outputs. Balanced propagation delays: t t pLH pHL Low noise: V = 0.8 V (max) OLP Pin and function compatible with the 74 series (74AC/HC/F/ALS/LS etc.) 08 type. Weight SOP14-P-300-1.27A: 0.18 g (typ.) TSSOP14-P-0044-0.65A: 0.06 g (typ.) VSSOP14-P-0030-0.50: 0.02 g (typ.) Start of commercial production 1995-12 1 2014-03-01 TC74VHCT08AF/AFT/AFK Pin Assignment IEC Logic Symbol (1) 1A & (3) 1Y 1A 1 14 V (2) CC 1B (4) 2A (6) 1B 2 13 4B 2Y (5) 2B (9) 1Y 12 4A 3A 3 (8) 3Y (10) 3B 2A 4 11 4Y (12) 4A (11) 4Y (13) 4B 2B 5 10 3B 2Y 6 9 3A GND 7 8 3Y (top view) Truth Table A B Y L L L L H L H L L H H H Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range V 0.5 to 7.0 V CC DC input voltage V 0.5 to 7.0 V IN 0.5 to 7.0 (Note 2) DC output voltage V V OUT 0.5 to V + 0.5 (Note 3) CC Input diode current I 20 mA IK Output diode current I 20 (Note 4)mA OK DC output current I 25 mA OUT DC V /ground current I 50 mA CC CC Power dissipation P 180 mW D Storage temperature T 65 to 150 C stg Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: V = 0 V CC Note 3: High or low state. I absolute maximum rating must be observed. OUT Note 4: V < GND, V > V OUT OUT CC 2 2014-03-01