TC7PZ14FU,LJ(CT Toshiba

TC7PZ14FU CMOS Digital Integrated Circuits Silicon Monolithic TC7PZ14FUTC7PZ14FUTC7PZ14FUTC7PZ14FU 1. 1. Functional DescriptionFunctional Description 1. 1. Functional DescriptionFunctional Description Dual Schmitt Inverter 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q100 (Rev. H) (Note 1) (2) Wide operating temperature range: T = -40 to 125 (Note 2) opr (3) High output current: 24 mA (min) at V = 3.0 V CC (4) Super high speed operation: t = 3.7 ns (typ.) at V = 5.0 V, C = 50 pF pd CC L (5) Operation voltage range: V = 1.65 to 5.5 V CC (6) 5.5 V tolerant inputs (7) 5.5 V power down protection output Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales representative. Note 2: For devices with the ordering part number ending in J(CT. T = -40 to 85 for the other devices. opr 3. 3. PackagingPackaging 3. 3. PackagingPackaging US6 Start of commercial production 2010-03 2017 2017-12-05 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0TC7PZ14FU 4. 4. 4. 4. Marking and Pin AssignmentMarking and Pin AssignmentMarking and Pin AssignmentMarking and Pin Assignment MarkingMarkingMarkingMarking Pin Assignment (Top view)Pin Assignment (Top view)Pin Assignment (Top view)Pin Assignment (Top view) 5. IEC Logic Symbol 5. 5. 5. IEC Logic SymbolIEC Logic SymbolIEC Logic Symbol 6. 6. 6. 6. Truth TableTruth TableTruth TableTruth Table A Y L H H L 7. 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 7. 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit Supply voltage V -0.5 to 6.0 V CC Input voltage V -0.5 to 6.0 V IN DC output voltage V (Note 1) -0.5 to 6.0 V OUT (Note 2) -0.5 to V + 0.5 CC Input diode current I -20 mA IK Output diode current I (Note 3) -20 mA OK DC output current I 50 mA OUT V /ground current I 100 mA CC CC Power dissipation P 200 mW D Storage temperature T -65 to 150 stg Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: V = 0 V CC Note 2: High (H) or Low (L) state. I absolute maximum rating must be observed. OUT Note 3: V < GND OUT 2017 2017-12-05 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0