TC7W00FKTE85LF Toshiba

TC7W00FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7W00FU, TC7W00FK Dual 2-Input NAND Gate Features TC7W00FU High Speed : t 6ns (typ.) at V = 5V pd = CC Low power dissipation : I = 1 A (max) at Ta = 25C CC High noise immunity : V = V = 28% V (min) NIH NIL CC Output drive capability : 10 LSTTL Loads Symmetrical Output Impedance : I = I = 4mA (min) OH OL Balanced propagation delays : t t pLH pHL Wide operating voltage range : V = 2 to 6 V CC (SM8) TC7W00FK Marking SM8 US8 Product Name 7 W 0 0 Lot No. W (US8) 0 0 Weight SSOP8-P-0.65 : 0.02 g (typ.) SSOP8-P-0.50A : 0.01 g (typ.) Pin Assignment (top view) 1A 1 8 V CC 1B 2 7 1Y 2Y 3 6 2B GND 4 5 2A Start of commercial production 1991-09 1 2014-11-10 TC7W00FU/FK Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Supply voltage V 0.5 to 7.0 V CC DC input voltage V 0.5 to V + 0.5 V IN CC DC output voltage V 0.5 to V + 0.5 V OUT CC Input diode current I 20 mA IK Output diode current I 20 mA OK DC output current I 25 mA OUT DC V /ground current I 25 mA CC CC 300 (SM8) Power dissipation P mW D 200 (US8) Storage temperature T 65 to 150 C stg Lead temperature (10 s) T 260 C L Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). IEC Logic Symbol Truth Table A B Y IN A OUT Y L L H & IN B L H H H L H H H L Operating Ranges Characteristics Symbol Rating Unit Supply voltage V 2.0 to 6.0 V CC Input voltage V 0 to V V IN CC Output voltage V 0 to V V OUT CC Operating temperature T 40 to 85 C opr 0 to 1000 (V = 2.0 V) CC Input rise and fall time t , t 0 to 500 (V = 4.5 V) ns r f CC 0 to 400 (V = 6.0 V) CC 2 2014-11-10