TC7WH74FU CMOS Digital Integrated Circuits Silicon Monolithic TC7WH74FUTC7WH74FUTC7WH74FUTC7WH74FU 1. 1. Functional DescriptionFunctional Description 1. 1. Functional DescriptionFunctional Description D-Type Flip Flop with Preset and Clear 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Wide operating temperature range: T = -40 to 125 (Note 1) opr (2) High speed operation: f = 170 MHz (typ.) (V = 5.0 V) MAX CC (3) Low power dissipation: I = 2.0 A (max) (T = 25 ) CC a (4) High noise immunity: V = V = 28 % V (min) NIH NIL CC (5) 5.5 V tolerant inputs (6) Balanced propagation delays: t t PLH PHL (7) Wide operating voltage range: V = 2.0 to 5.5 V CC Note 1: For devices with the ordering part number ending in J(CT. T = -40 to 85 for the other devices. opr 3. 3. PackagingPackaging 3. 3. PackagingPackaging SM8 4. 4. Marking and Pin AssignmentMarking and Pin Assignment 4. 4. Marking and Pin AssignmentMarking and Pin Assignment MarkingMarkingMarkingMarking Pin Assignment (Top view)Pin Assignment (Top view)Pin Assignment (Top view)Pin Assignment (Top view) Start of commercial production 2020-01 2017-2020 2020-02-04 1 Toshiba Electronic Devices & Storage Corporation Rev.4.0TC7WH74FU 5. 5. 5. 5. IEC Logic SymbolIEC Logic SymbolIEC Logic SymbolIEC Logic Symbol 6. 6. 6. 6. Truth TableTruth TableTruth TableTruth Table X: Don t care 7. 7. 7. 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Supply voltage V -0.5 to 7.0 V CC Input voltage V -0.5 to 7.0 IN DC output voltage V -0.5 to V + 0.5 OUT CC Input diode current I -20 mA IK Output diode current I (Note 1) 20 OK DC output current I 25 OUT V /ground current I 50 CC CC Power dissipation P 300 mW D Storage temperature T -65 to 150 stg Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: V < GND, V > V OUT OUT CC 2017-2020 2020-02-04 2 Toshiba Electronic Devices & Storage Corporation Rev.4.0