TCK206G, TCK207G, TCK208G TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK206G, TCK207G, TCK208G 0.75 V, 2A Load Switch IC with Reverse Current Blocking in Ultra Small Package The TCK206G, TCK207G and TCK208G are 0.75 V ultra low voltage load switch ICs for a power management with slew rate control driver and reverse current blocking(SW OFF state) function. Switch ON resistance is only 18.4 m (typ.) at 0.75 V, -1.5 A condition and output current is available up to 2.0 A (DC). TCK207G and TCK208G feature output auto-discharge function. These devices are available in 0.5 mm pitch ultra small package WCSP4C (0.9 mm x 0.9 mm, t: 0.5 mm (typ.)). Thus, these devices are ideal for WCSP4C portable applications that require high-density board assembly such as Weight : 0.9 mg ( typ.) cellular phone. Feature Low input voltage operation: V = 0.75 to 3.6 V IN High output current: I (DC) = 2.0 A OUT Low ON resistance : R = 18.1 m (typ.) at V = 3.3 V, -1.5 A ON IN R = 18.2 m (typ.) at V = 1.2 V, -1.5 A ON IN R = 18.4 m (typ.) at V = 0.75 V, -1.5 A ON IN Built in Slew rate control driver Built in Reverse current blocking(SW OFF state) Built in Auto-discharge (TCK207G and TCK208G) Active High and Pull down connection between CONTROL and GND (TCK206G and TCK207G) Active Low (TCK208G) Ultra small package : WCSP4C (0.9 mm x 0.9 mm, t: 0.5 mm) Pin Assignment(Top view) Top marking V IN CONTROL (A2) (B2) 6L: TCK206G 7L: TCK207G 8L: TCK208G Index V OUT GND (A1) (B1) Start of commercial production 2014-06 2019 1 2019-12-13 Toshiba Electronic Devices & Storage Corporation TCK206G, TCK207G, TCK208G Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Input voltage V -0.3 to 4.0 V IN Control voltage V -0.3 to 4.0 V CT Output voltage V -0.3 to V +0.3 V OUT IN DC 2.0 A Output current I OUT Pulse 3.0 (Note 1) A Power dissipation P 800 (Note 2) mW D Operating temperature range T 40 to 85 C opr Junction temeperature Tj 150 C Storage temperature T 55 to 150 C stg Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note1: 100 s pulse, 2% duty cycle Note2: Rating at mounting on a board (Glass epoxy(FR4) board dimension : 40mm x 40mm, both sides of board Metal pattern ratio : a surface approximately 50%, the reverse side approximately 50% Through hole : diameter 0.5mm x 28) 2019 2 2019-12-13 Toshiba Electronic Devices & Storage Corporation