TCR2EN series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EN series 200 mA CMOS Low Dropout Regulator in ultra small package The TCR2EN series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low quiescent bias current and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 3.6 V and capable of driving up to 200 mA. They feature overcurrent protection and an Auto-discharge function. The TCR2EN series is offered in the ultra small plastic mold package SDFN4/SDFN4E (0.8 mm x 0.8 mm x 0.38 mm). It has a low dropout voltage of 160 mV (2.5 V output, I = 150 mA) with low output noise voltage of 35 OUT V (2.5 V output) and a load transient response of only V = 55 mV rms OUT (I = 1 mA 150 mA, C = 1.0 F). BOTTOM VIEW ILLUSTRATION OUT OUT As small ceramic input and output capacitors can be used with the SDFN4/SDFN4E TCR2EN series, these devices are ideal for portable applications that require Weight: 0.6 mg (typ.) high-density board assembly such as cellular phones. Features Low Dropout voltage V = 160 mV (typ.) at 2.5 V-output, I = 150 mA DO OUT V = 210 mV (typ.) at 1.8 V-output, I = 150 mA DO OUT V = 360 mV (typ.) at 1.2 V-output, I = 150 mA DO OUT V = 490 mV (typ.) at 1.0 V-output, I = 150 mA DO OUT Low output noise voltage V = 35 V (typ.) at 2.5 V-output, I = 10 mA, 10 Hz < f < 100 kHz NO rms OUT V = 30 V (typ.) at 1.8 V-output, I = 10 mA, 10 Hz < f < 100 kHz NO rms OUT V = 23 V (typ.) at 1.2 V-output, I = 10 mA, 10 Hz < f < 100 kHz NO rms OUT V = 18 V (typ.) at 1.0 V-output, I = 10 mA, 10 Hz < f < 100 kHz NO rms OUT Fast load transient response (V = 55 mV (typ.) at I = 1 mA 150 mA, C =1.0 F) OUT OUT OUT Low quiescent bias current (I = 35 A (typ.) at I = 0 mA) B OUT High ripple rejection (R.R = 73 dB (typ.) at 2.5 V-output, I = 10 mA, f = 1 kHz) OUT Wide range Output Voltage line up (V = 1.0 to 3.6 V) OUT High V accuracy 1.0% (1.8 V V ) OUT OUT Overcurrent protection Auto-discharge Pull down connection between CONTROL and GND Ceramic capacitors can be used (C = 0.1 F, C =1.0 F) IN OUT Ultra Small package SDFN4/SDFN4E (0.8 mm x 0.8 mm x 0.38 mm) Start of commercial production 2013-11 2021 2021-08-31 1 Toshiba Electronic Devices & Storage Corporation TCR2EN series Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Input voltage V 6.0 V IN Control voltage V -0.3 to 6.0 V CT Output voltage V -0.3 to V + 0.3 V OUT IN Output current I 200 mA OUT Power dissipation P 300 (Note1) mW D Operating temperature range T 40 to 85 C opr Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40 mm x 40 mm x 1.6 mm, both sides of board. Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole hall: diameter 0.5 mm x 24 Pin Assignment (top view) V CONTROL IN 4 3 * 1 2 V OUT GND *Center electrode should be connected to GND or Open 2021 2021-08-31 2 Toshiba Electronic Devices & Storage Corporation