TCR3DG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3DG series 300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit The TCR3DG series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving up to 300 mA. They feature over-current protection, thermal shut down function, Inrush current protection circuit and Auto-discharge function. The TCR3DG series are offered in the ultra small package WCSP4E WCSP4E(0.645mm x 0.645mm t 0.40mm). It has a low dropout voltage of 160 mV (3.2 V output, I = 300 mA) with low output OUT Weight : 0.34 mg (Typ.) noise voltage of 38 Vrms (2.5 V output) and a load transient response of only V = 80 mV ( I = 1 mA300 mA, C =1.0 F). OUT OUT OUT As small ceramic input and output capacitors can be used with the TCR3DG series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. Features Low Drop-Out voltage V -V = 160 mV (Typ.) at 3.2 V-output, I = 300 mA IN OUT OUT Low output noise voltage < < V = 38 Vrms (Typ.) at 2.5 V-output, I = 10 mA, 10 Hz f 100 kHz NO OUT = = Fast load transient response (V = 80 mV (Typ.) at I = 1 300 mA, C =1.0 F ) OUT OUT OUT High ripple rejection ( R.R = 70 dB (Typ.) at 2.5V-output, I = 10 mA, f =1kHz ) OUT Over current protection Thermal shut down function Inrush current protection circuit Auto-discharge function Pull down connection between CONTROL and GND Ceramic capacitors can be used ( C = 1.0 F, C =1.0 F ) IN OUT Ultra small package WCSP4E (0.645 mm x 0.645 mm t 0.40 mm ) Start of commercial production 2016-03 1 2016-03-14 TCR3DG series Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Input voltage V 6.0 V IN Control voltage V -0.3 to 6.0 V CT Output voltage V -0.3 to V + 0.3 V OUT IN Output current I 300 mA OUT Power dissipation P 800 (Note1) mW D Operation temperature range T 40 to 85 C opr Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Board material: Glass epoxy(FR4) Board dimension: 40mm x 40mm (both sides of board), t= 1.6mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 24 Pin Assignment (Top view) 1 2 1 2 A A VIN VOUT B B CONTROL GND 2 2016-03-14