TCR3DM series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3DM series 300 mA CMOS Low Drop-Out Regulator with inrush current protection circuit The TCR3DM series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving up to 300 mA. They feature over-current protection, over-temperature protection, Inrush current protection circuit and Auto-discharge function. The TCR3DM series are offered in the ultra small plastic mold package DFN4 (1.0 mm x 1.0 mm t 0.58 mm). It has a low dropout voltage of 210 mV (2.5 V output, I = 300 mA) with low output OUT BOTTOM VIEW ILLUSTRATION noise voltage of 38 V (2.5 V output) and a load transient rms DFN4 response of only V = 80 mV ( I = 1 mA300 mA, C OUT OUT OUT Weight : 1.3 mg ( typ.) =1.0 F). As small ceramic input and output capacitors can be used with the TCR3DM series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. Features Low Drop-Out voltage V -V = 210 mV (typ.) at 2.5 V-output, I = 300 mA IN OUT OUT V -V = 270 mV (typ.) at 1.8 V-output, I = 300 mA IN OUT OUT V -V = 490 mV (typ.) at 1.2 V-output, I = 300 mA IN OUT OUT Low output noise voltage V = 38 V (typ.) at 2.5 V-output, I = 10 mA, 10 Hz f 100 kHz NO rms OUT Fast load transient response (V = 80 mV (typ.) at I = 1 mA 300 mA, C =1.0 F ) OUT OUT OUT High ripple rejection ( R.R = 70 dB (typ.) at 2.5V-output, I = 10 mA, f =1kHz ) OUT Over-current protection Over-temperature protection Inrush current protection circuit Auto-discharge function Pull down connection between CONTROL and GND Ceramic capacitors can be used ( C = 1.0 F, C =1.0 F ) IN OUT Ultra small package DFN4 (1.0 mm x 1.0 mm t 0.58 mm ) Start of commercial production 2013-03 1 2015-08-31 TCR3DM series Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Input voltage V 6.0 V IN Control voltage V -0.3 to 6.0 V CT Output voltage V -0.3 to V + 0.3 V OUT IN Output current I 300 mA OUT Power dissipation P 420 (Note1) mW D Operation temperature range T 40 to 85 C opr Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.6mm, both sides of board. Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole hall: diameter 0.5mm x 24 Pin Assignment (top view) V CONTROL IN 4 3 * 1 2 V OUT GND *Center electrode should be connected to GND or Open 2 2015-08-31