TCR3UG12A,LF Toshiba

TCR3UG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3UG series Ultra low quiescent current, Fast Load Transient 300 mA CMOS Low Dropout Regulator in ultra small package The TCR3UG series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring ultra low quiescent bias current and low dropout voltage. These voltage regulators are available in fixed output voltages between 0.8 V and 5.0 V and capable of driving up to 300 mA. They feature Over-current protection, Thermal Shutdown function and Auto-discharge option. The TCR3UG series is offered in the ultra small plastic mold package WCSP4F (0.645 mm x 0.645 mm (typ.) t 0.33 mm (max)) and has a low WCSP4F dropout voltage of 155 mV (3.3 V output, IOUT = 300 mA). As small ceramic input and output capacitors 1 F can be used with the TCR3UG series, these Weight: 0.26 mg (typ.) devices are ideal for portable applications that require high-density board assembly such as cellular phones, IoT equipment and wearable devices. Applications Power IC developed for portable applications, IoT equipment and wearable devices Features Ultra small package WCSP4F (0.645 mm x 0.645 mm (typ.) t 0.33 mm (max)). Low quiescent bias current (I = 0.34 A (typ.) at I = 0 mA, output voltage up to 1.5 V) B(ON) OUT High ripple rejection ratio 70 dB (VOUT = 0.8 V) Fast load transient response 60 mV (VOUT = 0.8 V), IOUT = 1 mA 50 mA Low dropout voltage VDO =VIN-VOUT = 140 mV (typ.) (VOUT = 3.3 V), IOUT = 300 mA Wide range output voltage line up (VOUT = 0.8 to 5.0 V) High V accuracy 1.0 % (1.8 V V ) OUT OUT Auto-discharge (TCR3UGxxA series)/ Non-discharge (TCR3UGxxB series) line up Overcurrent protection Thermal shutdown function Inrush current protection circuit Pull down connection between CONTROL and GND Ceramic capacitors can be used (CIN = 1 F, COUT = 1 F) Start of commercial production 2017-10 2018-2021 1 2021-06-18 Toshiba Electronic Devices & Storage Corporation TCR3UG series Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Input voltage V -0.3 to 6.0 V IN Control voltage V -0.3 to V + 0.3 6.0 V CT IN Output voltage V -0.3 to V + 0.3 6.0 V OUT IN Power dissipation P 800 (Note1) mW D Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy (FR4) board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm Metal pattern ratio: a surface approximately 50 %, the reverse side approximately 50 % Through hole : diameter 0.5 mm x 24 Operating Ranges Characteristics Symbol Rating Unit Input voltage V 1.5 to 5.5 (Note 2) V IN Control voltage V 0 to V V CT IN Output voltage V 0.8 to 5.0 V OUT Output current I DC 300 (Note 3) mA OUT Operating Temperature T -40 to 85 C opr Output Capacitance C 1.0 F OUT Input Capacitance C 1.0 F IN Note 2: IOUT = 1 mA. Please refer to Dropout Voltage (Page 13) and use it within Absolute Maximum Ratings Junction temperature and Operation Temperature Ranges. Note 3: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. 2018-2021 2 2021-06-18 Toshiba Electronic Devices & Storage Corporation