TCR4DG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR4DG series 420 mA CMOS Low Drop-Out Regulator with inrush current protection circuit The TCR4DG series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving up to 420 mA. They feature over-current protection, over-temperature protection, Inrush current protection circuit and Auto-discharge function. The TCR4DG series are offered in the ultra small plastic mold WCSP4E package WCSP4E (0.645 mm x 0.645 mm t 0.43 mm (max)). It has a low dropout voltage of 193 mV (3.3 V output, I = 420 mA) with OUT Weight: 0.34 mg ( typ.) low output noise voltage of 38 Vrms (2.5 V output) and a load transient response of only V = 115 mV ( I = 1 mA 420 mA, C =1.0 F). OUT OUT OUT As small ceramic input and output capacitors can be used with the TCR4DG series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. Features Low Drop-Out voltage VDO = 193 mV (typ.) at 3.3 V-output, I = 420 mA OUT Low output noise voltage V = 38 V (typ.) at 2.5 V-output, I = 10 mA, 10 Hz f 100 kHz NO rms OUT Fast load transient response (V = 115 mV (typ.) at I = 1 420 mA, C =1.0 F ) OUT OUT OUT High ripple rejection ( R.R = 70 dB (typ.) at 2.5 V-output, I = 10 mA, f = 1 kHz ) OUT Over-current protection Over-temperature protection Inrush current protection circuit Auto-discharge function Pull down connection between CONTROL and GND Ceramic capacitors can be used ( C = 1.0 F, C =1.0 F ) IN OUT Ultra small package WCSP4E (0.645 mm x 0.645 mm t 0.43 mm (max)) Start of commercial production 2017-04 1 2017-05-12 TCR4DG series Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Input voltage V 6.0 V IN Control voltage V -0.3 to 6.0 V CT Output current I 420 mA OUT Power dissipation P 800 (Note1) mW D Operation temperature range T -40 to 85 C opr Junction temperature T 150 C j Storage temperature range T -55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Board material: Glass epoxy(FR4) Board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5 mm x 24 Pin Assignment (Top view) 1 2 1 2 A A VIN VOUT B B CONTROL GND 2 2017-05-12