TCR5AM series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5AM series 500 mA CMOS Ultra Low Drop-Out Regulator The TCR5AM series are CMOS single-output voltage regulators with an on/off control input, featuring Ultra low dropout voltage, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that allows ultra-low drop-out of 90 mV (Typ.) at I = 300 mA ( 1.1 V output, V = 3.3 V ). OUT BAT These voltage regulators are available in fixed output voltages between 0.55 V and 3.6 V, and capable of driving up to 500 mA. Other features include over-current protection, over-temperature protection, Under-voltage-lockout and Auto-discharge function. The TCR5AM series are offered in the ultra small plastic mold BOTTOM VIEW ILLUSTRATION package DFN5B (1.2 mm x 1.2 mm t 0.38 mm). DFN5B As small ceramic input and output capacitors can be used with the TCR5AM series, these devices are ideal for portable applications Weight : 1.4 mg ( Typ.) that require high-density board assembly such as cellular phones. Features Low Drop-Out voltage V -V = 90 mV (Typ.) at 1.1 V output, V = 3.3 V , I = 300 mA IN OUT BAT OUT Low stand-by current ( I = 2 A (Max) at V = 5.5 V, V = 0 V ) B(OFF) BAT CT Low quiescent bias current ( I = 40 A (Typ.) at V = 5.5 V, I = 0 mA ) B BAT OUT Wide range Output Voltage line up ( V = 0.55 to 3.6 V ) OUT Over-current protection Over-temperature protection Inrush current protection circuit Under-voltage-lockout function Auto-discharge function Pull down connection between CONTROL and GND Ultra small package DFN5B (1.2 mm x 1.2 mm t 0.38 mm ) Start of commercial production 2014-12 1 2015-12-15 TCR5AM series Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Bias voltage V 6.0 V BAT Input voltage V 6.0 V IN Control voltage V -0.3 to 6.0 V CT Output voltage V -0.3 to V + 0.3 V OUT IN DC 500 Output current I mA OUT Pulse 600 (Note 1) Power dissipation P 600 (Note 2) mW D Operation temperature range T 40 to 85 C opr Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: 100 ms pulse, 50% duty cycle Note 2: Rating at mounting on a board Glass epoxy (FR4) board dimension: 40 mm x 40 mm x 1.6 mm, both sides of board Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole hall: diameter 0.5 mm x 24 Pin Assignment (top view) V CONTROL IN 4 3 5* 1 2 V V OUT BAT *Center electrode is GND 2 2015-12-15
