X-On Electronics has gained recognition as a prominent supplier of THGBM1G6D4EBAI4 emmc across the USA, India, Europe, Australia, and various other global locations. THGBM1G6D4EBAI4 emmc are a product manufactured by Toshiba. We provide cost-effective solutions for emmc, ensuring timely deliveries around the world.

THGBM1G6D4EBAI4 Toshiba

Name: THGBM1G6D4EBAI4
Brand: Toshiba
SKU: THGBM1G6D4EBAI4_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

THGBM1G6D4EBAI4 electronic component of Toshiba

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Part No.	THGBM1G6D4EBAI4
Manufacturer:	Toshiba
Category:	eMMC
Description:	eMMC Flash card 8G-byte 3.3V Embedded Flash Drive 169-Pin FBGA
Datasheet:	THGBM1G6D4EBAI4 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

THGBM1G6D4EBAI4 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Multiples : 1			N/A

Specifications

Manufacturer Toshiba Toshiba
Product Category eMMC eMMC

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We are delighted to provide the THGBM1G6D4EBAI4 from our eMMC category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the THGBM1G6D4EBAI4 and other electronic components in the eMMC category and beyond.

Additional Infomation About Product

SEMICONDUCTOR GENERAL CATALOG Memories and Storage Devices NAND Flash Memory 1 2009-8 SCE0004I NAND Flash Memory SLC Small Block Access Time Program/Erase Time (typ.) Operating Page Size Block Size Power Supply Capacity Part Number Temperature Package Serial cycle 1st access Program Time Block Erase Time (bit) (bit) (V) (C) (min) (ns) (max) (s) (ms) (ms) 512 Mbits TC58DVM92A3TA00 (512 + 16) x 8 (16K + 512) x 8 50 30 0.3 3 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 512 Mbits TC58DVM92A3BAJW (512 + 16) x 8 (16K + 512) x 8 50 30 0.3 3 2.7 to 3.6 40 to 85 P-TFBGA63-0813-0.80AZ 1 Gbits TC58DVG02A3TA00 (512 + 16) x 8 (16K + 512) x 8 50 30 0.3 3 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. SLC Large Block Middle Capacity Access Time Program/Erase Time (typ.) Power Operating Page Size Block Size Capacity Part Number Supply Temperature Package Serial cycle 1st access Program Time Block Erase Time (bit) (bit) (min) (ns) (max) (s) (ms) (ms) (V) (C) 512 Mbits TC58NVM9S3CTA00 (2048 + 64) x 8 (128K + 4K) x 8 50 30 0.3 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 512 Mbits TC58NVM9S3CBAJW (2048 + 64) x 8 (128K + 4K) x 8 50 30 0.3 2.5 2.7 to 3.6 40 to 85 P-TFBGA63-0813-0.80AZ 1 Gbits TC58NVG0S3CTA00 (2048 + 64) x 8 (128K + 4K) x 8 50 30 0.3 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 1 Gbits TC58NVG0S3CBAJ5 (2048 + 64) x 8 (128K + 4K) x 8 50 30 0.3 2.5 2.7 to 3.6 40 to 85 P-TFBGA63-0911-0.80CZ 1 Gbits TC58NVG0S3ETA00 * (2048 + 64) x 8 (128K + 4K) x 8 25 30 0.3 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 TC58NVG1S3CTA00 + + 2 Gbits (2048 64) x 8 (128K 4K) x 8 50 30 0.3 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 2 Gbits TC58NVG1S3CBAJX (2048 + 64) x 8 (128K + 4K) x 8 50 30 0.3 2.5 2.7 to 3.6 40 to 85 P-TFBGA63-1013-0.80AZ 2 Gbits TC58NVG1S3ETA00 * (2048 + 64) x 8 (128K + 4K) x 8 25 30 0.3 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 4 Gbits TC58NVG2S3ETA00 * (2048 + 64) x 8 (128K + 4K) x 8 25 30 0.3 2.5 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. *: New product SLC Large Capacity Access Time Program/Erase Time (typ.) Operating Page Size Block Size Power Supply Capacity Part Number Temperature Package Serial cycle 1st access Program Time Block Erase Time (bit) (bit) (V) (min) (ns) (max) (s) (ms) (ms) (C) 8 Gbits TC58NVG3S0DTG00 (4096 + 218) x 8 (256K + 13.6K) x 8 30 30 0.3 2 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 TH58NVG4S0DTG20 + + 16 Gbits (4096 218) x 8 (256K 13.6K) x 8 30 30 0.3 2 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 32 Gbits TH58NVG5S0DTG20 (4096 + 218) x 8 (256K + 13.6K) x 8 30 30 0.3 2 2.7 to 3.6 0 to 70 TSOP I 48-P-1220-0.50 Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 2 2009-8 SCE0004I

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Toshiba Memory may also be referenced as

Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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