TK20E60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK20E60U Switching Regulator Applications Unit: mm Low drain-source ON resistance: R = 0.165 (typ.) DS (ON) High forward transfer admittance: Y = 12 S (typ.) fs Low leakage current: I = 100 A (V = 600 V) DSS DS Enhancement-mode: V = 3.0~5.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 V GSS DC (Note 1) I 20 D Drain current A Pulse (t = 1 ms) I 40 DP (Note 1) Drain power dissipation (Tc = 25C) P 190 W D Single pulse avalanche energy E 144 mJ AS (Note 2) JEDEC Avalanche current I 15 A AR JEITA Repetitive avalanche energy (Note 3) E 19 mJ AR TOSHIBA 2-10V1A Channel temperature T 150 C ch Weight : 1.35 g (typ.) Storage temperature range T 55~150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 0.658 C/W th (ch-c) Thermal resistance, channel to ambient R 83.3 C/W th (ch-a) Note 1: Please use devices on conditions that the channel temperature is below 150C. 1 Note 2: V = 90 V, T = 25C (initial), L = 1.12 mH, R = 25 , I = 15 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 2010-02-10 TK20E60U Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 30 V, V = 0 V 1 A GSS GS DS Drain cut-off current I V = 600 V, V = 0 V 100 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 3.0 5.0 V th DS D Drain-source ON resistance R V = 10 V, I = 10 A 0.165 0.19 DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 10 A 3.0 12 S fs DS D Input capacitance C 1470 iss V = 10 V, V = 0 V, f = 1 MHz pF Reverse transfer capacitance C 150 rss DS GS Output capacitance C 3500 oss 10 V I = 10A V D OUT Rise time t 40 r V GS 0 V R = L Turn-on time t on 80 50 30 Switching time ns Fall time t 12 f V 300 V DD < Duty 1%, t = 10 s = Turn-off time t w 100 off Total gate charge Q 27 g Gate-source charge Q V 400 V, V = 10 V, I = 20 A 16 nC DD GS D gs Gate-drain charge Q 11 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 20 A DR (Note 1) Pulse drain reverse current (Note 1) I 40 A DRP Forward voltage (diode) V I = 20 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t I = 20 A, V = 0 V, 450 ns rr DR GS Reverse recovery charge Q dI /dt = 100 A/s 8.1 C DR rr Marking Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain Part No. hazardous substances in electrical and electronic equipment. (or abbreviation code) K20E60U Lot No. 2 2010-02-10