Product Information

TLP182(Y-TPL,E

TLP182(Y-TPL,E electronic component of Toshiba

Datasheet
Transistor Output Optocouplers X36 PBF Trans Opto couplr 125C3750Vrms

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1189 ea
Line Total: USD 356.7

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1969

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rise Time
Current Transfer Ratio
Fall Time
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
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TLP182 TOSHIBA Photocoupler InGaAs Infrared LED & PhotoTransistor TLP182 Telephone Use Equipment Unit: mm Programmable Controllers AC / DCInput Module Telecommunication TLP182 consist of photo transistor, optically coupled to two InGaAs infrared emitting diode connected inverse parallel, and can operate directly by low AC input current. TLP182 are guaranteed wide operating temperature (Ta = -55 to 125 C) and high isolation voltage (3750Vrms), its suitable for switching power supplies and hybrid ICs. Collector-emitter voltage : 80V (min) Current transfer ratio : 50% (min) Rank GB : 100% (min) Isolation voltage : 3750 Vrms (min) Operation Temperature :-55 to 125 C JEDEC - UL recognized : UL1577, File No. E67349 JEITA - cUL approved : CSA Component Acceptance Service No.5A, TOSHIBA 11-4M1S File No. E67349 Weight: 0.08 g (typ.) Option (V4) VDE approved : DIN EN 60747-5-5, approved No. 40009347 Pin Configuration (Note) When an EN 60747-5-5 approved type is needed, please designate the Option(V4) Construction mechanical rating 1 6 Creepage distance : 5.0 mm(min) Clearance : 5.0 mm(min) 3 4 Insulation thickness : 0.4 mm(min) 1: Anode, Cathode 3: Cathode, Anode 4: Emitter 6: Collector 1 2013-9-13 TLP182 Current Transfer Ratio (Unless otherwise specified, Ta = 25C) Current Transfer Ratio Rank Test condition I / I Marking of classification Unit C F (Note 1) Min Max I =5 mA, V = 5 V F CE Blank 50 600 Blank, YE, GR, GB, BL I =0.5 mA, V = 5 V F CE Y I =5 mA, V = 5 V 50 150 YE F CE I =0.5 mA, V = 5 V F CE GR I =5 mA, V = 5 V 100 300 GR F CE % I =0.5 mA, V = 5 V F CE GB I =5 mA, V = 5 V 100 600 GB F CE I =0.5 mA, V = 5 V F CE BL I =5 mA, V = 5 V 200 600 BL F CE I =0.5 mA, V = 5 V F CE Note1: Specify both the part number and a rank in this format when ordering (e.g.) rank GB: TLP182 (GB,E For safety standard certification, however, specify the part number alone. (e.g.)TLP182 (GB,E: TLP182 2 2013-9-13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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