TLP183(Y,E Toshiba

TLP183 Photocouplers Infrared LED & Photo Transistor TLP183 1. Applications Office Equipment Programmable Logic Controllers (PLCs) AC Adapters I/O Interface Boards 2. General TLP183 is a low input type phototransistor coupler that consists of a photo transistor optically coupled to an infrared LED in a SO6 package. TLP183 is guaranteed high isolation voltage (3750 Vrms) and wide operating temperature (T = -55 to 125 ). a TLP183 is smaller than DIP package, it s suitable for high density surface mounting applications such as programmable controllers. 3. Features (1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50 % (min) ( I = 0.5 mA, V = 5 V) F CE GB Rank: 100 % (min) ( I = 0.5 mA, V = 5 V) F CE (3) Isolation voltage: 3750 Vrms (min) (4) Operating temperature: -55 to 125 (5) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4). 4. Packaging and Pin Assignment 1: Anode 3: Cathode 4: Emitter 6: Collector 11-4M1S Start of commercial production 2013-09 2016-2020 2020-11-18 1 Toshiba Electronic Devices & Storage Corporation Rev.8.0TLP183 5. Mechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance 5.0 Internal isolation thickness 0.4 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Note Rating Unit LED Input forward current I 50 mA F Input forward current (pulsed) I (Note 1) 1 A FP Input forward current derating (T 90 ) I /T -1.11 mA/ a F a Input reverse voltage V 5 V R Input power dissipation P 100 mW D Input power dissipation (T 90 ) P /T -2.22 mW/ a D a derating Junction temperature T 135 j Detector Collector-emitter voltage V 80 V CEO Emitter-collector voltage V 7 V ECO Collector current I 50 mA C Collector power dissipation P 150 mW C Collector power dissipation (T 25 ) P /T -1.36 mW/ a C a derating Junction temperature T 135 j Common Operating temperature T -55 to 125 opr Storage temperature T -55 to 125 stg Lead soldering temperature (10 s) T 260 sol Total power dissipation P 200 mW T Total power dissipation (T 25 ) P /T -1.82 mW/ a T a derating Isolation voltage AC, 60 s, R.H. 60 % BV (Note 2) 3750 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 0.1 ms, f = 100 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. 2016-2020 2020-11-18 2 Toshiba Electronic Devices & Storage Corporation Rev.8.0