TLP292 TOSHIBA Photocoupler InGaAs Infrared LED & Photo-Transistor TLP292 Programmable Controllers Unit: mm AC/DC-Input Module Hybrid ICs TLP292 consist of photo transistor, optically coupled to two InGaAs infrared emitting diode connected inverse parallel, and can operate directly by AC input current TLP292 is housed in the SO4 package, very small and thin coupler. Since TLP292 are guaranteed wide operating temperature (Ta=-55 to 125 C) and high isolation voltage (3750Vrms), its suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs. Collector-Emitter voltage: 80 V (min) Current transfer ratio: 50% (min) Rank GB: 100% (min) JEDEC - Isolation voltage : 3750 Vrms (min) JIETA - Operating temperature range: -55 to 125 C TOSHIBA 11-3C1 UL recognized : UL1577, File No. E67349 Weight: 0.05 g (typ.) cUL approved : CSA Component Acceptance Service No.5A, File No. E67349 Option (V4) Pin Configuration VDE approved : DIN EN 60747-5-5, File No. 40009347 (Note) When an EN 60747-5-5 approved type is needed, TLP292 please designate the Option (V4) 1 4 2 3 Construction Mechanical Rating 1: Anode Creepage distance: 5.0 mm (min) Cathode Clearance: 5.0 mm (min) 2: Cathode Anode Insultion thickness: 0.4 mm (min) 3: Emitter 4: Collector 1 2013-09-12 TLP292 Current Transfer Ratio (Unless otherwise specified, Ta = 25C) Current Transfer Ratio Rank I / I C F Test condition Marking of classification Unit (Note 1) Min Max I =5 mA, V = 5 V F CE Blank 50 600 Blank, YE, GR, GB, BL I =0.5 mA, V = 5 V F CE Y I =5 mA, V = 5 V 50 150 YE F CE I =0.5 mA, V = 5 V F CE GR I =5 mA, V = 5 V 100 300 GR F CE % I =0.5 mA, V = 5 V F CE GB I =5 mA, V = 5 V 100 600 GB F CE I =0.5 mA, V = 5 V F CE BL I =5 mA, V = 5 V 200 600 BL F CE I =0.5 mA, V = 5 V F CE Note 1: Specify both the part number and a rank in this format when ordering (e.g.) rank GB: TLP292 (GB,E For safety standard certification, however, specify the part number alone. (e.g.)TLP292 (GB,E: TLP292 2 2013-09-12