TLP3120 TOSHIBA Photocoupler Photorelay TLP3120 High-Speed Memory Tester Unit: mm High-Speed Logic Tester High-Frequency Measurement Equipment The Toshiba TLP3120 consists of an infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. 6-pin SOP (2.54SOP6): 2.1 mm high, 2.54 mm pitch Normally opened (form A) device Peak OFF-state voltage: 80 V (min) Trigger LED current: 5 mA (max) ON-state current: 1.25 A (max) ON-state resistance: 0.15 (max) Capacitance between output terminals: 1000 pF (max) Isolation voltage: 1500 V (min) rms UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A TOSHIBA 11-7C1 File No.E67349 Weight: 0.13 g (typ.) Pin Configuration (top view) 1: Anode 1 6 2: Cathode 3: N.C. 4: Drain D1 2 5 5: Source 6: Drain D2 3 4 Start of commercial production 2000-12 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP3120 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I C -0.5 mA/C F/ Reverse voltage V 5 V R Diode power dissipation P 50 mW D P /C -0.5 mW/C Diode power dissipation derating (Ta 25C) D Junction temperature T 125 C j OFF-state output terminal voltage V 80 V OFF ON-state current I 1.25 A ON ON-state current derating (Ta 25C) I C -12.5 mA/C ON/ Output power dissipation P 234 mW O Output power dissipation derating (Ta 25C) P / C -2.34 mW / C O Junction temperature T 125 C j Storage temperature range T -40 to 125 C stg Operating temperature range T -20 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BV 1500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device is considered as a two-terminal device. LED side pins are shorted together and detector side pins are shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 64 V DD Forward current I 5 30 mA F ON-state current I 1.25 A ON Operating temperature T 25 60 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current V I = 10 mA 1.0 1.15 1.3 V F F Reverse current I V = 5 V 10 A R R Capacitance between terminals C V = 0 V, f = 1 MHz 15 pF T F OFF-state current I V = 20 V, Ta = 50 C 1200 1500 pA OFF OFF Capacitance between terminals C V = 0 V, f = 100 MHz 460 1000 pF OFF 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation Detector Led Detector LED