TLP331,TLP332 TOSHIBA Photocoupler IRED & Photo-Transistor TLP331, TLP332 Programmable Controllers Unit: mm AC/DC-Input Module Telecommunication The TOSHIBA TLP331 and TLP332 consist of an infrared emitting diode optically coupled to a photo-transistor in a six lead plastic DIP package. This photocoupler provides the unique feature of high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications. TLP332 has no-base internal connection for high-EMI environments. Collector-emitter voltage: 55 V (min) Isolation voltage: 5000 Vrms (min) UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 TOSHIBA 11-7A8S Weight: 0.4 g (typ.) Current transfer ratio Current Transfer Ratio (min) Pin Configurations ( top view) Ta = 25C Ta = -25 to 75C Classification Marking of (Note 1) Classification TLP331 TLP332 I = 1 mA I = 0.5 mA I = 1 mA F F F V = 0.5V V = 1.5V V = 0.5V CE CE CE 1 6 1 6 Rank BV 200% 100% 100% BV Standard 100% 50% 50% BV, blank 2 5 2 5 Note 1: ex. Standard: TLP331 3 4 3 4 Rank BV: TLP331(BV) Note: Application type name for certification test, 1: ANODE 1: ANODE please use standard product type name, i.e. 2: CATHODE 2: CATHODE 3: NC 3: NC TLP331(BV): TLP331 4: EMITTER 4: EMITTER 5: COLLECTOR 5: COLLECTOR 6: BASE 6: NC Start of commercial production 1986-03 2019 1 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP331,TLP332 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 39C) I /C -0.7 mA/C F Peak forward current (100 s pulse, 100 pps) I 1 A FP Reverse Voltage V 5 V R P 50 mW Diode power dissipation D P /C -0.58 mW/C Diode power dissipation derating (Ta >39 C) D Junction temperature T 125 C j Collector-emitter voltage V 55 V CEO Collector-base voltage (TLP331) V 80 V CBO Emitter-collector voltage V 7 V ECO Emitter-base voltage (TLP331) V 7 V EBO Collector current I 50 mA C Power dissipation P 150 mW C Power dissipation derating (Ta 25C) P C -1.5 mW/C C/ Junction temperature T 125 C j Storage temperature range T -55 to 125 C stg Operating temperature range T -55 to 100 C opr Lead soldering temperature (10 s) T 260 C sol Total package power dissipation P 250 mW T Total package power dissipation derating (Ta 25C) P /C -2.5 mW/C T Isolation voltage (AC, 60 s, RH 60 %) (Note 1) BV 5000 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 5 25 V CC Forward current I 1.6 25 mA F Collector current I 1 10 mA C Operating temperature T -25 75 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-24 Toshiba Electronic Devices & Storage Corporation Detector LED