TLP351 TOSHIBA Photocoupler IRED + Photo IC TLP351 Inverter for Air Conditioner Unit: mm IGBT/Power MOS FET Gate Drive Industrial Inverter The TOSHIBA TLP351 consists of an infrared emitting diode and an integrated photodetector. This unit is 8-lead DIP package. TLP351 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP351 is capable of direct gate drive of lower Power IGBTs. Peak output current: 0.6 A (max) Guaranteed performance over temperature: 40 to 100C Supply current: 2 mA (max) Power supply voltage: 10 to 30 V Threshold input current : I = 5 mA (max) F Switching time (t /t ) : 700 ns (max) pLH pHL Common mode transient immunity: 10 kV/ s TOSHIBA 11-10C4S Isolation voltage: 3750 Vrms UL-recognized: UL 1577, File No.E67349 Weight: 0.54 g (typ.) cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(D4). Truth Table Pin Configuration (top view) 1: N.C. 1 8 Input LED Tr1 Tr2 Output 2: Anode 3: Cathode H ON ON OFF H 2 7 4: N.C. L OFF OFF ON L 5: GND 3 6 6: V (output) O 7: N.C. 4 5 8: V CC Schematic I CC V CC (Tr1) 8 I F 2+ I V O F (Tr2) 3 V O 6 GND 5 A 0.1 F bypass capacitor must be connected Start of commercial production between pin 8 and 5. 2002-05 2019 1 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP351 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 20 mA F Forward current derating (Ta 85C) I /Ta 0.54 mA/C F Peak transient forward current (Note 1) IFP 1 A Reverse voltage V 5 V R Power Dissipation P 40 mW D Power Dissipation Derating (Ta 85C) P /C -1.0 mW/C D Junction temperature T 125 C j H peak output current (Note 2) I 0.6 A OPH L peak output current (Note 2) I 0.6 A OPL Output voltage V 35 V O Supply voltage V 35 V CC Output Power Dissipation P 260 mW O mW/C Output Power Dissipation Derating (Ta 85C) P /C -6.5 O Junction temperature T 125 C j Operating frequency (Note 3) f 25 kHz Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 100 C opr Lead soldering temperature (10 s) (Note 4) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 5) BV 3750 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width P 1 s, 300 pps W Note 2: Exponential waveform pulse width P 10 s, f 15 kHz W Note 3: Exponential waveform I 0.4 A ( 2.0 s), I +0.4 A ( 2.0 s), Ta = 100 C OPH OPL Note 4: It is 2 mm or more from a lead root. Note 5: Device considered a two terminal device: pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Input current, ON (Note 7) I 7.5 10 mA F (ON) Input voltage, OFF VF (OFF) 0 0.8 V Supply voltage V 10 30 V CC Peak output current I /I 0.2 A OPH OPL Operating temperature T 40 100 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 7: Input signal rise time (fall time) < 0.5 s 2019 2 2019-06-24 Toshiba Electronic Devices & Storage Corporation Detector LED