TLP387(D4-TPR,E Toshiba

TLP387 Photocouplers Infrared LED & Photo Transistor TLP387TLP387TLP387TLP387 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Programmable Logic Controllers (PLCs) I/O Interface Boards Home Electric Appliances 2. 2. 2. 2. GeneralGeneralGeneralGeneral TLP387 is a photocoupler that consist of an infrared LED optically coupled to a darlington transistor. Housed in a SO6L (4 pin) package, it has a high noise immunity and a high insulation. With the high brakdown voltage between the collector and emitter, TLP387 is suitable in applications such as 100VDC output modules of programmable controllers. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Collector-emitter voltage: 300 V (min) (2) Current transfer ratio: 1000 % (min) ( I = 1 mA, V = 1 V) F CE (3) Isolation voltage: 5000 Vrms (min) (4) Operating temperature range: -55 to 110 (5) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Thailand Factory Option (D4) Note 1: When a VDE approved type is needed, please designate the Option (D4)Option (D4)Option (D4). 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 3: Cathode 4: Emitter 6: Collector 11-4P1A Start of commercial production 2016-02 2016-2020 2020-01-16 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TLP387 5. 5. 5. 5. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 8.0 mm Clearance 8.0 Internal isolation thickness 0.4 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit LED Input forward current I 50 mA F Input forward current derating (T 90 ) I /T -1.43 mA/ a F a Input forward current (pulsed) I (Note 1) 1 A FP Input power dissipation P 100 mW D Input power dissipation (T 90 ) P /T -2.85 mW/ a D a derating Input reverse voltage V 5 V R Junction temperature T 125 j Detector Collector-emitter voltage V 300 V CEO Emitter-collector voltage V 0.3 ECO Collector current I 150 mA C Collector power dissipation P 150 mW C Collector power dissipation (T 25 ) P /T -1.5 mW/ a C a derating Junction temperature T 125 j Common Operating temperature T -55 to 110 opr Storage temperature T -55 to 125 stg Lead soldering temperature (10 s) T 260 sol Total power dissipation P 250 mW T Total power dissipation (T 25 ) P /T -2.5 mW/ a T a derating Isolation voltage A(C, 60 s, R.H. 60 %) BV (Note 2) 5000 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 0.1 ms, f = 1000 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pin 4 and 6 are shorted together. 2016-2020 2020-01-16 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0