TLP4006G TOSHIBA Photocoupler Photorelay TLP4006G Telecommunication Unit: mm Measurement Equipment Security Equipment FA The Toshiba TLP4006G consists of an infrared emitting diode optically coupled to a photo-MOSFET and is the 1-form-A/B photorelay with 350-V withstanding voltage. Normally closed (1-form-B) device, normally opened (1-form-A) device Peak off-state voltage: 350 V (min) Trigger LED current: 3 mA (max) On-state current: 120 mA (max) On-state resistance: 25 (max) Isolation voltage: 2500 Vrms (min) Pin Configuration (top view) JEDEC 1 8 JEITA TOSHIBA 11-10C4 Weight: 0.54 g (typ.) 2 7 1: Anode (1b) 2: Cathode (1b) 3 6 3: Anode (1a) 4: Cathode (1a) 5: Drain D1 (1a) 6: Drain D2 (1a) 4 5 7: Drain D3 (1b) 8: Drain D4 (1b) Start of commercial production 2002-09 2019 1 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP4006G Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C 0.5 mA/C F Peak forward current IFP 1 A Reverse voltage V 5 V R Input power dissipation P 50 mW D PD/C -0.5 mW/C Input power dissipation derating (Ta 25C) Junction temperature Tj 125 C Off-state output terminal voltage V 350 V OFF One channel operation On-state current I 120 mA ON Two channel operations (1a1b simultaneous operation) One channel operation On-state current derating I /C 1.2 mA/C ON Two channel operations (Ta 25C) (1a1b simultaneous operation) Output power dissipation P 370 mW O Output power dissipation derating (Ta 25C) P /C -3.7 mW/C O Junction temperature Tj 125 C Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 85 C opr Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 1) BVS 2500 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 280 V DD Forward current I 5 25 mA F On-state current ION 120 mA Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-24 Toshiba Electronic Devices & Storage Corporation Detector LED