TLP626,TLP626-2,TLP626-4 TOSHIBA Photocoupler GaAs Ired & PhotoTransistor TLP626, TLP626-2, TLP626-4 Unit: mm Programmable Controllers AC / DCInput Module Telecommunication The TOSHIBA TLP626, 2 and 4 consist of gallium arsenide infrared emitting diodes connected in inverse parallel, optically coupled to a photo transistor. The TLP6262 offers two isolated channels in an eight lead plastic DIP, while the TLP6264 provides four isolated channels in a sixteen plastic DIP. Collector emitter voltage: 55V (min) Current transfer ratio Current Transfer Ratio (min) TOSHIBA 115B2 Marking Ta = 25C Ta = 25~75C Weight: 0.26 g (typ.) Classification of Classification I = 1mA I = 0.5mA I = 1mA F F F V = 0.5V V = 1.5V V = 0.5V CE CE CE Rank BV 200% 100% 100% BV Standard 100% 50% 50% BV, blank Isolation voltage: 5000V min) rms ( UL recognized: UL1577, file no.E67349 BSI approved: BS EN60065: 2002 certificate no.7426 BS EN60950-1: 2002 certificate no.7427 Note: Application type name for certification test, please use standard product type name, i.e. TLP626(BV): TLP626 TOSHIBA 1110C4 Pin Configuration (top view) Weight: 0.54 g (typ.) TLP626 TLP6262 TLP6264 1 1 1 4 8 16 3 7 15 2 2 2 3 3 6 14 1 : Anode Cathode 5 13 4 4 2 : Cathode 5 12 Anode 1, 3 : Anode 3 : Emitter Cathode 11 6 4 : Collector 2, 4 : Cathode Anode 7 10 5, 7 : Emitter 8 9 TOSHIBA 1120A3 6, 8 : Collector Weight: 1.1 g (typ.) 1, 3, 5, 7 : Anode, Cathode 2, 4, 6, 8 : Cathode, Anode 9, 11, 13, 15 : Emitter 10, 12, 14, 16 : Collector Start of commercial production 1984/04 1 2014-09-22 TLP626,TLP626-2,TLP626-4 Absolute Maximum Ratings (Ta = 25C) Rating Characteristic Symbol Unit TLP6262 TLP626 TLP6264 Forward current I 60 50 mA F Forward current derating I / C 0.7 (Ta 39C) 0.5 (Ta 39C) mA / C F Pulse forward current I 1 (100s pulse,100pps) A FP Power dissipation (1 circuit) P 100 70 mW D Power dissipation derating (Ta 25C, 1 circuit) P / C 1.0 0.7 mW / C D Junction temperature T 125 C j Collectoremitter voltage V 55 V CEO Emittercollector voltage V 7 V ECO Collector current I 50 mA C Collector power dissipation (1 circuit) P 150 100 mW C Collector power dissipation derating P / C 1.5 1.0 mW / C C (Ta 25C, 1 circuit) Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range P 55 to 100 C opr Lead soldering temperature T 260 (10s) C sol Total package power dissipation (1 circuit) P 250 150 mW T Total package power dissipation derating (Ta 25C, 1 circuit) P / C 2.5 1.5 mW / C T Isolation voltage (Note 1) BV 5000 (AC, 1minute, R.H. 60%) Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol MinTyp.Max Unit Supply voltage V 5 24 V CC Forward current I 1.6 20 mA F(RMS) Collector current I 1 10 mA C Operating temperature T 25 75 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2014-09-22 Detector LED