TLP785,TLP785F TOSHIBA Photocoupler GaAs IRED & PhotoTransistor TLP785, TLP785F TLP785 Unit: mm Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission between Different Voltage Circuits The TOSHIBA TLP785 consists of a silicone phototransistor optically coupled to a gallium arsenide (GaAs) infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5 kVRMS (min)). TLP785F is a lead forming type for the long creepage surface mounting of TLP785. TLP785: 7.62 mm pitch type DIP4 TOSHIBA 11-5L1 TLP785F: 10.16 mm pitch type DIP4 Weight: 0.25 g (typ.) Collector-emitter voltage: 80 V (min) Current transfer ratio: 50% (min) TLP785F Unit: mm Rank GB: 100% (min) Isolation voltage: 5000 Vrms (min) UL approved : UL1577, File No.E67349 c-UL approved :CSA Component Acceptance Service No. 5A, File No.E67349 Option (D4) VDE approved : DIN EN60747-5-5(Note 1) CQC-approved: GB4943.1, GB8898 China Factory SEMKO approved: EN60065:2002 EN60950-1:2001, EN60335-1:2002 Note 1 : When a EN60747-5-5 approved type is needed, please designate Option(D4) Construction mechanical rating 7.62 mm Pitch 10.16 mm Pitch Standard Type TLPxxxF Type TOSHIBA 11-5L102 Creepage distance 7.0 mm (min) 8.0 mm (min) Weight: 0.25 g (typ.) Clearance 7.0 mm (min) 8.0 mm (min) Pin Configurations (top view) Insulation thickness 0.4 mm (min) 0.4 mm (min) Inner creepage distance 4.0 mm (min) 4.0 mm (min) 1 4 2 3 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector Start of commercial production 2010-11 1 2015-10-09 TLP785,TLP785F Current Transfer Ratio (Note) Current Transfer Ratio (%) (I / I ) Classification C F Type Marking of Classification (Note 1) I = 5mA, V = 5V, Ta = 25C F CE Min Max None 50 600 Blank Rank Y 50 150 YE Rank GR 100 300 GR Rank BL 200 600 BL TLP785 Rank GB 100 600 GB Rank YH 75 150 Y+ Rank GRL 100 200 G Rank GRH 150 300 G+ Rank BLL 200 400 B Note 1: Ex. rank GB: TLP785 (GB) Note : Application type name for certification test, please use standard product type name, i. e. TLP785 (GB): TLP785 Absolute Maximum Ratings (Note) (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 60 mA F Forward current derating (Ta 39C) I / C 0.7 mA / C F Pulse forward current (Note 2) I 1 A FP Power dissipation P 90 mW D Power dissipation derating (Ta 39C) P / C 0.9 mW / C D Reverse voltage V 5 V R Junction temperature T 125 C j Collectoremitter voltage V 80 V CEO Emittercollector voltage V 7 V ECO Collector current I 50 mA C Power dissipation (single circuit) P 150 mW C Power dissipation derating P / C 1.5 mW / C C (Ta 25C) Junction temperature T 125 C j Operating temperature range T 55 to 110 C opr Storage temperature range T 55 to 125 C stg Lead soldering temperature (10 s) T 260 C sol Total package power dissipation P 240 mW T Total package power dissipation derating P / C 2.4 mW / C T (Ta 25C) Isolation voltage (Note 3) BV 5000 S V rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 100 s pulse, 100 Hz frequency Note 3: AC, 60 s., R.H. 60%. Apply voltage to LED pin and detector pin together. 2 2015-10-09 Detector LED