TLP785,TLP785F TOSHIBA Photocoupler GaAs IRED & PhotoTransistor TLP785,TLP785F TLP785 Unit: mm Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits The TOSHIBA TLP785 consists of a silicone phototransistor optically coupled to a gallium arsenide (GaAs) infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kV (min)). RMS TLP785F is a lead forming type for the long creepage surface mounting of TLP785. TOSHIBA 11-5L1 Weight: 0.32 g (typ.) TLP785: 7.62mm pitch type DIP4 TLP785F Unit: mm TLP785F: 10.16mm pitch type DIP4 Collector-emitter voltage: 80V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 5000V (min.) rms UL approved: UL1577, file No. E67349 BSI under application: BS EN60065:2002 BS EN60950-1:2006 SEMKO under application:EN60065:2002 EN60950-1:2001, EN60335-1:2002 Option(D4)type VDE approved: DIN EN60747-5-2 (Note): When an EN60747-5-2 approved type is needed, Please designate Option (D4) TOSHIBA 11-5L102 Weight: 0.32g (typ.) . Construction mechanical rating Pin Configurations 7.62mm Pitch 10.16mm Pitch (top view) Standard Type TLPxxxF Type Creepage distance 7.0mm(min) 8.0mm(min) Clearance 7.0mm(min) 8.0mm(min) 1 4 Insulation thickness 0.4mm(min) 0.4mm(min) 2 3 Inner creepage distance 4.0mm(min) 4.0mm(min) 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 1 2012-02-20 TLP785,TLP785F Current Transfer Ratio Current Transfer Ratio (%) Classification (I / I ) C F Type Marking of Classification (Note 1) I = 5mA, V = 5V, Ta = 25C F CE Min Max None 50 600 Blank Rank Y 50 150 YE Rank GR 100 300 GR Rank BL 200 600 BL TLP785 Rank GB 100 600 GB Rank YH 75 150 Y+ Rank GRL 100 200 G Rank GRH 150 300 G+ Rank BLL 200 400 B (Note 1): Ex. rank GB: TLP785 (GB) (Note 2): Application type name for certification test, please use standard product type name, i. e. TLP785 (GB): TLP785 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 60 mA F Forward current derating (Ta 39C) I / C 0.7 mA / C F Pulse forward current (Note 3) I 1 A FP Power dissipation P 90 mW D Power dissipation derating P / C 0.9 mW / C D Reverse voltage V 5 V R Junction temperature T 125 C j Collectoremitter voltage V 80 V CEO Emittercollector voltage V 7 V ECO Collector current I 50 mA C Power dissipation (single circuit) P 150 mW C Power dissipation derating P / C 1.5 mW / C C (Ta 25C) Junction temperature T 125 C j Operating temperature range T 55 to 110 C opr Storage temperature range T 55 to 125 C stg Lead soldering temperature (10s) T 260 C sol Total package power dissipation P 240 mW T Total package power dissipation derating P / C 2.4 mW / C T (Ta 25C) Isolation voltage (Note 4) BV 5000 S V rms (Note): Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 3): 100 s pulse, 100 Hz frequency (Note 4): AC, 1 min., R.H. 60%. Apply voltage to LED pin and detector pin together. 2 2012-02-20 Detector LED