X-On Electronics has gained recognition as a prominent supplier of TSA24N50M MOSFETs across the USA, India, Europe, Australia, and various other global locations. TSA24N50M MOSFETs are a product manufactured by Truesemi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TSA24N50M Truesemi

Name: TSA24N50M
Brand: Truesemi
SKU: TSA24N50M_Truesemi
Availability: InStock
Rating: 5 (11 reviews)

TSA24N50M electronic component of Truesemi

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See Product Specifications

Part No.	TSA24N50M
Manufacturer:	Truesemi
Category:	MOSFETs
Description:	MOSFET N Trench 500V 24A (Tc) 4V @ 250uA 200 mÎ© @ 12A,10V TO-3P RoHS
Datasheet:	TSA24N50M Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.65 ea
Line Total: USD 1.65

Availability - 367
Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

TSA24N50M More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

367

Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ : 1
Multiples : 1

1 : USD 1.65
10 : USD 1.5293
30 : USD 1.0579
90 : USD 0.9831
450 : USD 0.9487
900 : USD 0.9353

Specifications

Manufacturer

Truesemi Truesemi

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

TO - 3P TO - 3P

Brand Category

Truesemi Truesemi

Fet Type

n trench n trench

Drain To Source Voltagevdss

500 V 500 V

Continuous Drain Current Id @ 25°C

24 A (t C) 24 A (t C)

Vgsth Max @ Id

4v @ 250ua 4v @ 250ua

Rds On Max @ Id Vgs

200 m @ 12a,10v 200 m @ 12a,10v

Power Dissipation-Max Ta

290 W 290 W

Drain Source Voltage Vdss

500 V 500 V

Continuous Drain Current Id

24 A 24 A

Drain Source On Resistance Rdson@Vgs Id

200 mOhms @10V , 12A 200 mOhms @10V , 12A

Power Dissipation Pd

290 W 290 W

Gate Threshold Voltage Vgsth@Id

4 V @250uA 4 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

TSA24N50M Alternative Parts

We are delighted to provide the TSA24N50M from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSA24N50M and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Truesemi TSA24N50M MOSFET is a N-channel trench gate field-effect transistor. This device is an enhancement-mode, insulated-gate field-effect transistor with an optimized tolerance for high DC current transfer ratio (DCR) and fast switching speeds. It has a breakdown voltage of 500V, drain to source current up to 24A, and Gate threshold voltage of 4V. It has a maximum Gate source resistance of 200 mO at 12A when the drain source voltage is 10V and a maximum Gate source current of 250µA. The TSA24N50M is supplied in a TO-3P RoHS compliant package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
367 Ship by Fri. 10 Jan to Wed. 15 Jan MOQ : 1 Multiples : 1	1 : USD 1.65 10 : USD 1.5293 30 : USD 1.0579 90 : USD 0.9831 450 : USD 0.9487 900 : USD 0.9353

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