X-On Electronics has gained recognition as a prominent supplier of 1N4148CSM-QR-B Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1N4148CSM-QR-B Diodes - General Purpose, Power, Switching are a product manufactured by TT Electronics. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1N4148CSM-QR-B TT Electronics

1N4148CSM-QR-B electronic component of TT Electronics
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Part No.1N4148CSM-QR-B
Manufacturer: TT Electronics
Category: Diodes - General Purpose, Power, Switching
Description: Semelab TT Electronics Diodes - General Purpose, Power, Switching
Datasheet: 1N4148CSM-QR-B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 100
Multiples : 100
100 : USD 42.9899
200 : USD 41.7138
500 : USD 41.7138
2500 : USD 41.2549
5000 : USD 40.0217
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the 1N4148CSM-QR-B from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N4148CSM-QR-B and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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SILICON EPITAXIAL PLANAR DIODE 1N4148CSM Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) A V Breakdown Voltage 100V BR V Working Peak Reverse Voltage 75V RWM (1) I Average Rectified Output Current, T = 75C 200mA O A I Surge Current, half sine wave, t = 8.3ms 2A FSM p (1) P T = 75C Total Power Dissipation at 385mW D A Derate Above 75C 3.08mW/C P T = 75C Total Power Dissipation at 1.042W D SP Derate Above 75C 8.33mW/C T Junction Temperature Range -65 to +200C J T Storage Temperature Range -65 to +200C stg THERMAL PROPERTIES Symbols Parameters Min. Typ. Max. Units (1) R (PCB) Thermal Resistance, Junction To Ambient, On PCB 325 C/W JA R Thermal Resistance, Junction To Solder Pads 120 C/W JSP NNootteess NNootteess (1) PCB = FR4 0.0625 Inch (1.59mm), 1 Layer, 1.0-Oz Cu, horizontal, in still air. R with a defined PCB thermal resistance condition included, is measured at I = 200mA. JA O Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 7789 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website: SILICON EPITAXIAL PLANAR DIODE 1N4148CSM ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) A Symbols Parameters Test Conditions Min. Typ Max. Units V I = 100A Breakdown Voltage 100 BR R I = 10mA 0.8 F I = 100mA 1.2 V F (2) V Forward Voltage F I = 10mA T = 150C 0.8 F A I = 100mA T = -55C 1.3 F A V = 20V 25 R nA V = 75V 500 R I Reverse Current R V = 20V 35 R T = 150C A A V = 75V 75 R DYNAMIC CHARACTERISTICS V = 0V 4 R C Capacitance f = 1.0MHz pF V = 1.5V 2.8 R I = IR = 10mA R = 100 F L t Reverse Recovery Time 5 ns rr I = 1.0mA REC NNootteess NNootteess (2) Pulse Width 300us, 2% SSSSeeeemmmmeeeellllaaaabbbb LLLLiiiimmmmiiiitttteeeedddd Coventry Road, Lutterworth, Leicestershire, LE17 4JB Document Number 7789 Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales semelab-tt.com Website:

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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