X-On Electronics has gained recognition as a prominent supplier of MJ11028 Unclassified across the USA, India, Europe, Australia, and various other global locations. MJ11028 Unclassified are a product manufactured by TT ELECTRONICS. We provide cost-effective solutions for Unclassified, ensuring timely deliveries around the world.

MJ11028 TT ELECTRONICS

MJ11028 electronic component of TT ELECTRONICS
Images are for reference only
See Product Specifications
Part No.MJ11028
Manufacturer: TT ELECTRONICS
Category: Unclassified
Description: DARLINGTON TRANSISTOR, TO-3
Datasheet: MJ11028 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 22.6658 ea
Line Total: USD 22.67

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 16 Jul to Mon. 22 Jul
MOQ : 1
Multiples : 1
1 : USD 31.078
5 : USD 27.5047
10 : USD 25.0648
50 : USD 23.7595
100 : USD 20.492
250 : USD 20.475

   
Manufacturer
Product Category
Brand
Transistor Polarity
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Av Current Ic
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Full Power Rating Temperature
Hfe Min
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Termination Type
Transistor Type
Voltage Vcbo
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NPN PNP MJ11028 MJ11029 SEME MJ11030 MJ11031 MJ11032 MJ11033 LAB MECHANICAL DATA Dimensions in mm (inches) COMPLEMENTARY DARLINGTON 25.4 (1.0) POWER TRANSISTOR 10.92 1.57 (0.430) (0.062) FEATURES HIGH DC CURRENT GAIN H = 1000 Min I = 25A FE C H = 400 Min 0 I = 50A FE C 12 CURVES TO 100A (Pulsed) DIODE PROTECTION TO RATED I C MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE EMITTER SHUNT RESISTOR +0.4 4.1 4.0 0.1 0 +0.016 11.65 0.35 9.0 (0.161 ) (0.157 0.004) 0 JUNCTION TEMPERATURE TO +200C (0.459 0.014) (0.354) 0.127 Tolerance unless otherwise stated (0.005) APPLICATIONS TO3 For use as output devices in complementary general purpose amplifier applications. Pin 1 Base Pin 2 Emitter Case Collector ABSOLUTE MAXIMUM RATINGS MJ11028 MJ11030 MJ11032 (T = 25C unless otherwise stated) MJ11029 MJ11031 MJ11033 case V Collector Emitter Voltage 60V 90V 120V CEO V Collector Base Voltage 60V 90V 120V CBO V Emitter Base Voltage 5V EBO I Continuous Collector Current 50A C I Peak Collector Current 100A CM I Base Current 2A B P Total Dissipation at T = 25C 300W tot case Derate above 25C 1.71W/C T , T Operating and Storage Junction Temperature Range 55 to +175C STG J Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 2/96 E-mail: sales semelab.co.uk Website: NPN PNP MJ11028 MJ11029 SEME MJ11030 MJ11031 MJ11032 MJ11033 LAB Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS MJ11028 , MJ11029 60 Collector Emitter I = 100mA C V MJ11030 , MJ11031 90 V (BR)CEO* Breakdown Voltage I = 0 B MJ11032 , MJ11033 120 V = 60V 2 CE MJ11028 , MJ11029 R = 1kW T = 150C 10 BE C Collector Emitter V = 90V 2 mA CE I MJ11030 , MJ11031 CER Leakage Current R = 1kW T = 150C 10 BE C V = 120V 2 CE MJ11032 , MJ11033 R = 1kW T = 150C 10 BE C I Emitter CutOff Current V = 5V I = 0 5 mA EBO BE C Collector Emitter V = 50V CE I 2 mA CEO Leakage Current I = 0 B ON CHARACTERISTICS V = 5V I = 25A 1000 18000 CE C h DC Current Gain FE* V = 5V I = 50A 400 CE C Collector Emitter I = 25A I = 250mA 2.5 C B V V CE(sat)* Saturation Voltage I = 50A I = 500mA 3.5 C B Base Emitter I = 25A I = 200mA 3.0 C B V V BE(sat)* Saturation Voltage I = 50A I = 300mA 4.5 C B * Pulse Test: t 300s, d 2%. p Figure 1 DC Safe Operating Area Figure 2 DC Current Gain Figure 3 ON Voltage Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 2/96 E-mail: sales semelab.co.uk Website:

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