SMD Silicon Phototransistor OP520, OP521 OP520, OP521 High Photo Sensitivity Fast Response Time 1206 Package Size Opaque or Water Clear Flat Lens Description: The OP520 and OP521 are NPN silicon phototransistor mounted in miniature SMT packages. Both the OP520 and OP521 have a flat lens however, the OP520 lens is opaque to shield the device from stray light. These sen- sors are packaged in 1206 size chip carriers that are compatible with most automated mounting equipment. The OP520 and OP521 are mechanically and spectrally matched to the OP250 series infrared LEDs. Applications Non-Contact Position Sensing Datum detection Machine automation Darker Green Mark Optical encoders RECOMMENDED SOLDER PADS 4.600.10 .181.0039 1.500.10 1.600.10 .059.0039 .063.0039 1.600.10 .063.0039 OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue 1.3 05/10 Phone: (800) 341-4747 FAX: (972) 323 2396 sensors optekinc.com www.optekinc.com Page 1 of 3 SMD Silicon Phototransistor SMD Silicon Phototransistor OP520, OP521 OP520, OP521 Absolute Maximum Ratings o T = 25 C unless otherwise noted A Storage Temperature Range -40 C to +85 C Operating Temperature Range -25 C to +85 C (1) Lead Soldering Temperature 260 C Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Collector Current 20 mA (2) Power Dissipation 75 mW Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. De-rate linearly at 2.17 mW/ C above 25 C. Electrical Characteristics (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS CONDITIONS 2 (3) I On-State Collector Current 0.25 mA V = 5.0V, E = 5.0mW/cm C(ON) CE e 2 (3) V Collector-Emitter Saturation Voltage 0.4 V I = 100A, E = 5.0mW/cm CE(SAT) C e (4) I Collector-Emitter Dark Current 100 nA V = 5.0V, E = 0 CEO CE e V Collector-Emitter Breakdown Voltage 30 V I = 100A, E = 0 (BR)CEO C e V Emitter-Collector Breakdown Voltage 5 V I = 100A, E = 0 (BR)ECO E e t , t Rise and Fall Times 15 s I = 1mA, R = 1K r f C L 3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (0.04Ta-3.4) 4. To Calculate typical collector dark current in A, use the formula I = 10 where Ta is the ambient temperature in C. CEO Relative On-State Collector Relative On-State Collector Current Current vs. Irradiance vs. Temperature 160% 140% 2 Normalized at Ee = 5mW/cm Normalized at T = 25C . 80C A Conditions: V = 5V, Conditions: V = 5V, CE CE = 935nm, TA = 25 C = 935nm, T = 25 C A 140% 130% 120% 120% 100% 110% 80% 100% 60% 90% -40C 40% 80% 20% 70% 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -25 0 25 50 75 100 2 Temperature(C) EeIrradiance (mW/cm ) OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue 1.3 05/10 Phone: (800) 341-4747 FAX: (972) 323 2396 sensors optekinc.com www.optekinc.com Page 2 of 3 Relative Collector Current Relative Collector Current