OPB200 TT Electronics

Housing material Opaque to visible and infrared light Noncontact switching Printed PCBoard mount 0.200 (5.1 mm) slot width, 0.320 (8.1 mm) slot depth The OPB200 contains an Infrared LED (890 nm) and a Phototransistor paired in a plastic housing. The housing is an opaque grade of injection -molded plastic, which minimizes the assemblys sensitivity to visible and near - infrared radiation. Each device has approximately 0.060 1.52 mm diameter lenses providing the versatility necessary for general switching applications. The output Phototransistor ON state conducts current (I ) when no object is in the slot. The output switches to the OFF C(ON) state when a device interrupts the light beam from the Emitter (LED) to the Phototransistor. The Phototransistor can acknowledge light between 400 nm and 1100 nm with optimum response in the 880 nm range. Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information. Non-contact interruptive object sensing 1 4 Assembly line automation Machine automation Equipment security Machine safety 2 3 Pin Description 1 Anode 2 Cathode 3 Collector 4 Emitter MILLIMETERS DIMENSIONS ARE IN: INCHES Ordering Information Part LED Peak Aperture Lead Length / Slot Width / Number Wavelength Sensor Emiett r/Sensor Spacing Depth OPB200 890 nm Transistor 0.200 / 0.320 None 0.425 / 0.400 Ro HS Storage & Operating Temperature Range -40C to +85C (1) Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 260C Input Diode Forward DC Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 3 A Reverse DC Voltage 2 V (2) Power Dissipation 100 mW Output Phototransistor Collector-Emitter Voltage 30 V Emitter -Collector Voltage 5 V Collector DC Current 30 mA (2) Power Dissipation 100 mW Input Diode (see OP140 for additional information) V Forward Voltage - - 1.7 V I = 20 mA F F I Reverse Current - - 100 A V = 2 V R R Output Phototransistor (see OP550 for additional information) V Collector-Emitter Breakdown Voltage 30 - - V I = 1 mA (BR)CEO C V Emitter -Collector Breakdown Voltage 5 - - V I = 100 A (BR)ECO E I Collector Dark Current - - 100 nA V = 10 V, I = 0, E = 0 CEO CE F E Combined V Collector-Emitter Saturation Voltage - - 0.4 V I = 100 A, I = 20 mA CE(SAT) C F I On-State Collector Current 1 4 6 mA V = 0.4 V, I = 20 mA C(ON) CE F Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.67 mW/C above 25 C. (3) All parameters tested using pulse techniques. (4) Lead spacing of 0.400 (10.16 mm). Leads are a minimum of 0.020 sq. (0.508 mm) and 0.425 (10.795 mm) long. (5) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. (6) Polarity is denoted by a notch next to pin 1 (LED Anode) of the package.