Slotted Optical Switch OPB820, OPB821Z, OPB821S Z OPB820 Features: Non-contact switching Four standard aperture sizes for high resolution Low profile 0.080 (2.03 mm) wide, 0.250 (8.89 mm) deep slot Choice of PCBoard or wire mountings OPB821Z Description: Each OPB820 and OPB821Z device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor mounted in a low-cost black plastic housing on opposite sides of an 0.080 (2.03 mm) wide slot. Each device in this series has a 0.040 (1.02 mm) wide aperture located in front of the infrared diode. Phototransistor switching occurs when an opaque object passes through the slot. Devices are oeff red with 0.275 (6.96 mm) lead spacing for PCBoard mounting (OPB820) or 24 (609 mm) 26 AWG wire leads (OPB821Z). Applications: Non-contact object sensing Assembly line automation Machine automation Equipment safety Ordering Information Machine safety Part LED Peak Slot Width / Aperture Lead Length / Number Wavelength Sensor Depth Emitter/Sensor Spacing OPB820 0.04 / 0.04 OPB820S10 0.04 / 0.01 0.425 / 0.275 OPB820S5 0.04 / 0.005 OPB820S3 0.04 / 0.003 0.080 / 890 nm Transistor 0.255 OPB821Z 0.040 / 0.040 OPB821S10Z 0.040 / 0.010 24 /26 AWG Wire OPB821S5Z 0.040 / 0.005 OPB821S3Z 0.040 / 0.003 General Note TT Electronics Optek Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue C 11/2016 Page 1 TT electronics plc Slotted Optical Switch OPB820, OPB821Z, OPB821S Z Electrical Specifications Absolute Maximum Ratings (T =25C unless otherwise noted) A Storage and Operating Temperature -40C to +85C (1) Lead Soldering Temperature (1/16 inch 1.6 mm from case for 5 seconds with soldering iron) 260C Input Diode Continuous Forward Current 50 mA Peak Forward Current (1s pulse width, 300 pps) 1 A Reverse Voltage 2 V (2) Power Dissipation 100 mW Output Phototransistor Collector-Emitter Voltage 30 V Emitter -Collector Voltage 5 V (2) Power Dissipation 100 mW Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) For OPB820, derate linearly 1.67 mW/ C above 25 C. For OPB821Z, derate linearly 1.82 mW/ C above 25 C. (3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. Electrical Characteristics (T = 25C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP245 for additional information) V Forward Voltage - - 1.7 V I = 20 mA F F I Reverse Current - - 100 A V = 2 V R R Output Phototransistor (See OP555 for additional information) V Collector-Emitter Breakdown Voltage 30 - - V I = 100 mA (BR)CEO C V Emitter -Collector Breakdown Voltage 5 - - V I = 100 A (BR)ECO E I Collector-Emitter Dark Current - - 100 nA V = 10 V, I = 0, I = 0 CEO CE F E Coupled Collector-Emitter Saturation Voltage OPB820, OPB821Z - - 0.4 V I = 250 A, I = 20 mA C F V OPB820S3, OPB821S3Z - - 0.4 V I = 40 A, I = 20 mA CE(SAT) C F OPB820S5, OPB821S5Z - - 0.4 V I = 150 A, I = 20 mA C F OPB820S10, OPB821S10Z - - 0.4 V I = 250 A, I = 20 mA C F On-State Collector Current OPB820, OPB821Z 500 - - A V = 5 V, I = 20 mA CE F I OPB820S3, OPB821S3Z 60 - - A V = 5 V, I = 20 mA C(ON) CE F OPB820S5, OPB821S5Z 300 - - A V = 5 V, I = 20 mA CE F OPB820S10, OPB821S10Z 400 - - A V = 5 V, I = 20 mA CE F General Note TT Electronics Optek Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue C 11/2016 Page 2 TT electronics plc