Nichrome Resistor Networks on Silicon Substrates 1 S Series: SQSxxA , SQSxxB, SSNxxA, SSNxxB, SSWxxA, SSWxxB, SPDxxA, SPDxxB Isolated and bussed circuits Thin film resistor network RoHS compliant Not Recommended for New Designs For alternative see SQS - Nichrome Resistor Networks on Silicon Substrates 1 S Series: SQSxxA , SQSxxB, SSNxxA, SSNxxB, SSWxxA, SSWxxB, SPDxxA, SPDxxB 4 Power Derating Curve & Package Power, Watts 70C, Max. QSOP SOIC (Narrow) SOIC (Wide) P-DIP 16 20 24 8 14 16 16 20 24 8 14 16 0.6 0.7 0.8 0.4 0.7 0.8 1.0 1.2 1.2 0.4 0.6 0.8 Environmental (Mil-R-83401) Thermal Shock plus Power Conditioning R 0.25% Short Time Overload R 0.1% Terminal Strength R 0.1% Moisture Resistance R 0.2% Mechanical Shock R 0.25% Vibration R 0.25% Low Temperature Operation R 0.05% High Temperature Exposure R 0.1% Resistance to Solder Heat R 0.1% Marking Permanency Per MIL-STD-202, Method 215 Flammability UL-94V-0 Rated Storage Temperature Range -55C to +125C Mechanical Lead Plating 100 matte Tin (RoHS) Lead Material Copper Alloy Lead Configuration Gull Wing Lead Coplanarity 0.004 (0.102 mm) Substrate Material Silicon Resistor Material Passivated Nichrome Body Material Molded Epoxy 4 Maximum power per resistor 70C is 100 mW, not to exceed package power. General Note TT electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT electronics own data and is considered accurate at time of going to print. www.bitechnologies.com www.irctt.com www.welwyn-tt.com TT electronics plc 10.13