1200V-66mW SiC Normally-on JFET Rev. A, November 2019 DATASHEET Description UnitedSiC offers the high-performance G3 SiC normally-on JFET UJ3N120065K3S transistors. This series exhibits ultra-low on resistance (R ) and DS(ON) gate charge (Q ) allowing for low conduction and switching loss. The G device normally-on characteristics with low R at V = 0 V is also DS(ON) GS ideal for current protection circuits without the need for active control, as well as for cascode operation. CASE CASE D (2) Features w Typical on-resistance R of 66m W DS(on),typ w Voltage controlled G (1) w Maximum operating temperature of 175C w Extremely fast switching not dependent on temperature w Low gate charge S (3) w Low intrinsic capacitance 1 2 3 w RoHS compliant Typical applications w Over Current Protection Circuits Part Number Package Marking w DC-AC Inverters UJ3N120065K3S TO-247-3L UJ3N120065K3S w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ3N120065K3S Rev. A, November 2019 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 1200 V DS DC -20 to +3 V Gate-source voltage V GS 1 -30 to +20 V AC T = 25C 34 A C 2 I Continuous drain current D T = 100C 25 A C 3 T = 25C I 90 A Pulsed drain current C DM T = 25C Power dissipation P 254 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T ,T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. +20V AC rating applies for turn-on pulses <200ns applied with external R > 1 W. G 2. Limited by T J,max 3. Pulse width t limited by T p J,max Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max R Thermal resistance, junction-to-case 0.45 0.59 C/W qJC Datasheet: UJ3N120065K3S Rev. A, November 2019 2