M8085I US-Lasers

US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 808nm-5mW - Infrared Laser Diodes and Infrared Diode Laser Modules Back To Laser Modules TECHNICAL DATA for LASER MODULE Barrel Specs: Collect Specs: Lens Housing Specs: z 3/8 - 56 Thread Size z 3/8 - 56 Thread Size z 3/8 - 56 Thread Size z Dia: 10.4mm z 4.3mm Aperature z 3.7mm Aperture z Length: 17mm z Half Hard Brassbbb z 7mm Plastic Lens INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - (Tc=25 C) TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure z Wavelength: 808nm (Typ.) z Optical Power: 5mW CW z Threshold Current: 25mA (Typ.) z Standard Package: 5.6mm Infrared light output 808nm Pin Out Diagram - Style A Optical power output 5mW CW Package Type 5.6mm Built-in photo diode for monitoring laser output Items Symbols Values Unit Optical output power Po 5 mW Laser diode reverse voltage VLDR 2 V Photo diode reverse voltage VPDR 30 V Operating temperature Topr -10 ~ +40 C Storage temperature Tstg -40 ~ +85 C OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 C) Symbols Min. Typ. Max. Unit Test Condition Items Optical output power Po - 5 - mW - Threshold current Ith 10 20 35 mA - Operating current Iop 15 25 45 mA Po=5mW Operating voltage Vop 1.9 2.1 2.5 V Po=5mW Lasing wavelength 8 D 800 808 820 nm Po=5mW Beam divergence F 8 11 15 deg Po=5mW Beam divergence z 20 35 45 deg Po=5mW Slope Efficiency (mW/mA) 0 0.1 0.3 0.6 - Monitor current Im 10 100 200 Po=5mW,Vr=5V A Astigmatism As - 11 - Po=5mW m 3000-5,000 MTTF Po=5mW,NA=0.4 hrs. Emitter Size 1 x 4 Microns Emitter Distance to Cap Lens 0.3mm Structure Index Guided X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for us-lasers manufacturer: Other Similar products are found below : HK-10.4 D8085I HK-6.4 VOL7805I MM8505I NS102-200K THAD 5.6-9MM VOL6505I M8085I D8505I M7805I AD 5.6-9MM NS102A-200K M6355I D6355I M8505I M6505I D405-120 D7805I D405-20 MM6505I