HE8812SG USHIO

HE8812SG ODE2063-00 (M) GaAlAs Infrared Emitting Diode Rev.0 Aug. 01, 2008 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features Package Type Internal Circuit HE8812SG: SG1 High efficiency and high output power 1 2 Absolute Maximum Ratings (T = 25C) C Item Symbol Ratings Unit Forward current I 250 mA F Reverse voltage V 3 V R Operating temperature Topr 20 to +60 C Storage temperature Tstg 40 to +90 C Optical and Electrical Characteristics (T = 25C) C Item Symbol Min Typ Max Unit Test Conditions Optical output power P 40 mW I = 200 mA O F Peak wavelength p 840 870 900 nm I = 200 mA F Spectral width 50 60 nm I = 200 mA F Forward voltage V 2.5 V I = 200 mA F F Reverse current I 100 A V = 3 V R R Capacitance Ct 30 pF V = 0 V, f = 1 MHz R Rise time t 10 ns I = 50 mA r F Fall time t 10 ns I = 50 mA f F Rev.0 Aug. 01, 2008 page 1 of 4 HE8812SG Typical Characteristic Curves Optical Output Power vs. Forward Current Forward Current vs. Forward Voltage 60 250 50 200 40 150 T = -20C C 30 T = -20C C 0C 100 25C 25C 20 40C 60C 60C 50 10 0 0 50 100 150 200 250 010.5.0 1.52.0 2.5 Forward current, I (mA) Forward voltage, V (V) F F Spectral Distribution Pulse Response 100 Current pulse T = 25C C T = 25C C 80 60 Optical pulse 40 20 0 -40 -20 lp 20 40 20 ns/div. Wavelength, (nm) Radiation Pattern 0 100 30 T = 25C C 80 60 60 40 20 90 0 100 80 60 40 20 0 20 40 60 80 Angle, ( ) Relative radiation intensity (%) Rev.0 Aug. 01, 2008 page 2 of 4 Angle, ( ) Optical output power, P (mW) O Relative radiation intensity (%) Forward current, I (mA) F Relative intensity Relative radiation intensity (%)