X-On Electronics has gained recognition as a prominent supplier of VBA1104N MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBA1104N MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBA1104N VBsemi Elec

Name: VBA1104N
Brand: VBsemi Elec
SKU: VBA1104N_VBsemi_Elec
Availability: InStock
Rating: 5 (11 reviews)

VBA1104N electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBA1104N
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET N Trench 100V 6.4A (Tc) 3V @ 250uA 40 mÎ© @ 5A,10V SO-8 RoHS
Datasheet:	VBA1104N Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5414 ea
Line Total: USD 0.54

Availability - 97
Ship by Wed. 14 May to Mon. 19 May

MOQ: 1 Multiples: 1
Pack Size: 1

VBA1104N More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

97

Ship by Wed. 14 May to Mon. 19 May

MOQ : 1
Multiples : 1

1 : USD 0.5414
10 : USD 0.5284
30 : USD 0.5208
100 : USD 0.3464

Specifications

Manufacturer

VBsemi Elec VBsemi Elec

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SO - 8 SO - 8

Brand Category

Vbsemi Elec Vbsemi Elec

Fet Type

n trench n trench

Drain To Source Voltagevdss

100 V 100 V

Continuous Drain Current Id @ 25°C

6.4 A (t C) 6.4 A (t C)

Vgsth Max @ Id

3v @ 250ua 3v @ 250ua

Rds On Max @ Id Vgs

40 m @ 5a,10v 40 m @ 5a,10v

Power Dissipation-Max Ta

5.9 W 5.9 W

Drain Source Voltage Vdss

100 V 100 V

Continuous Drain Current Id

6.4 A 6.4 A

Power Dissipation Pd

5.9 W 5.9 W

Drain Source On Resistance Rdson@Vgs Id

40 mOhms @10V , 5A 40 mOhms @10V , 5A

Gate Threshold Voltage Vgsth@Id

3 V @250uA 3 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

VBA1104N Alternative Parts

We are delighted to provide the VBA1104N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBA1104N and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBA1104N is a vertical MOSFET N Trench Device manufactured by VBsemi Elec. It is designed for switching applications and features a 100V breakdown voltage, 6.4A (Tc) current rating, 3V @ 250uA gate threshold voltage, 40 mÎ© @ 5A,10V on-state resistance, and comes packaged in an 8-pin SO-8 RoHS compliant package. This device is suitable for use in automotive, consumer, industrial, and military applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
97 Ship by Wed. 14 May to Mon. 19 May MOQ : 1 Multiples : 1	1 : USD 0.5414 10 : USD 0.5284 30 : USD 0.5208 100 : USD 0.3464

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