The VBA2311 is a MOSFET P Trench 30V 11.6A (Tc) 3V @ 250uA 12.5 mO @ 10A, 10V SO-8 RoHS device manufactured by VBsemi Elec. It is a surface-mounted, fast-switching, low-on-resistance, low-bulk-capacitance MOSFET with a 30 volt breakdown voltage, an 11.6A maximum current rating, a 3V temperature coefficient, a 250uA maximum gate charge, a 12.5 mO on resistance at 10A, 10V, a SO-8 RoHS package, and a wide operating temperature range. It is suitable for high-efficiency switching applications in digital power supplies, and the P trench technology offers improved switching performance compared to traditional MOSFET designs.