X-On Electronics has gained recognition as a prominent supplier of VBE2102M MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBE2102M MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBE2102M VBsemi Elec

Name: VBE2102M
Brand: VBsemi Elec
SKU: VBE2102M_VBsemi_Elec
Availability: InStock
Rating: 5 (11 reviews)

VBE2102M electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBE2102M
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET P Trench 100V 8.8A 2.5V @ 250uA 350 mÎ© @ 3.4A,4.5V TO-252 RoHS
Datasheet:	VBE2102M Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.7695 ea
Line Total: USD 0.77

Availability - 18
Ship by Fri. 18 Apr to Wed. 23 Apr

MOQ: 1 Multiples: 1
Pack Size: 1

VBE2102M More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

18

Ship by Fri. 18 Apr to Wed. 23 Apr

MOQ : 1
Multiples : 1

1 : USD 0.7695
10 : USD 0.6049
30 : USD 0.5338
100 : USD 0.3433
500 : USD 0.3141
1000 : USD 0.2952

Specifications

Manufacturer

VBsemi Elec VBsemi Elec

Product Category

MOSFETs MOSFETs

Brand

Vbsemi Elec Vbsemi Elec

Rohs

Y Y

Package

TO - 252 TO - 252

Fet Type

P Channel P Channel

Drain To Source Voltagevdss

100 V 100 V

Continuous Drain Current Id @ 25°C

8.8 A 8.8 A

Vgsth Max @ Id

2.5V @ 250uA 2.5V @ 250uA

Rds On Max @ Id Vgs

350mO @ 3.4A,4.5V 350mO @ 3.4A,4.5V

Power Dissipation-Max Ta 25°C

32.1 W 32.1 W

Drain Source Voltage Vdss

100 V 100 V

Continuous Drain Current Id

8.8 A 8.8 A

Drain Source On Resistance Rdson@Vgs Id

350 mOhms @4.5V , 3.4A 350 mOhms @4.5V , 3.4A

Power Dissipation Pd

32.1 W 32.1 W

Gate Threshold Voltage Vgsth@Id

2.5 V @250uA 2.5 V @250uA

Type

P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

VBE2102M Alternative Parts

We are delighted to provide the VBE2102M from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBE2102M and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBE2102M is a MOSFET P Trench device from VBsemi Elec rated for 100V 8.8A operation with a drain-source voltage of 2.5V @ 250uA and a drain-source on-resistance rating of 350 mO @ 3.4A, 4.5V. It is packaged in a TO-252 RoHS compliant package, and is RoHS compliant itself.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
18 Ship by Fri. 18 Apr to Wed. 23 Apr MOQ : 1 Multiples : 1	1 : USD 0.7695 10 : USD 0.6049 30 : USD 0.5338 100 : USD 0.3433 500 : USD 0.3141 1000 : USD 0.2952

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