X-On Electronics has gained recognition as a prominent supplier of VBM1102N MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBM1102N MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBM1102N VBsemi Elec

Name: VBM1102N
Brand: VBsemi Elec
SKU: VBM1102N_VBsemi Elec
Availability: InStock
Rating: 5 (11 reviews)

VBM1102N electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBM1102N
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET N Channel 100V 70A 4V @ 250uA 18mO @ 70A,10V TO-220AB RoHS
Datasheet:	VBM1102N Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.0634 ea
Line Total: USD 1.06

Availability - 173
Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

VBM1102N More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

173

Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ : 1
Multiples : 1

1 : USD 1.0634
10 : USD 0.8811
30 : USD 0.7919
100 : USD 0.7008
500 : USD 0.6476
1000 : USD 0.6191

Specifications

Manufacturer
VBsemi Elec VBsemi Elec

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
TO - 220AB TO - 220AB

Brand Category
Vbsemi Elec Vbsemi Elec

Fet Type
N Channel N Channel

Drain To Source Voltagevdss
100 V 100 V

Continuous Drain Current Id @ 25°C
70 A 70 A

Vgsth Max @ Id
4V @ 250uA 4V @ 250uA

Rds On Max @ Id Vgs
18mO @ 70A,10V 18mO @ 70A,10V

Power Dissipation-Max Ta 25°C
355 W 355 W

Drain Source Voltage Vdss
100 V 100 V

Continuous Drain Current Id
70 A 70 A

Drain Source On Resistance Rdson@Vgs Id
18 mOhms @10V , 70A 18 mOhms @10V , 70A

Power Dissipation Pd
355 W 355 W

Gate Threshold Voltage Vgsth@Id
4 V @250uA 4 V @250uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

VBM1102N Alternative Parts

We are delighted to provide the VBM1102N from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBM1102N and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBM1102N is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by the VBsemi Elec electronics company. It has a maximum drain-source voltage of 100V with a maximum current capacity of 70A. It has a threshold voltage of 4V with a gate source leakage current of 250uA, and a drain-source on resistance of 18mO @70A, 10V. It comes in a TO-220AB package and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
173 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 1 Multiples : 1	1 : USD 1.0634 10 : USD 0.8811 30 : USD 0.7919 100 : USD 0.7008 500 : USD 0.6476 1000 : USD 0.6191

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Hot	VBM1201M MOSFET N Channel 200V 20A 3V @ 250uA 110mO @ 20A,10V TO-220AB RoHS Stock : 171 Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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