VTM Current Multiplier VTM48 E H 120 x 010 B00 S CUNRTLS High Efficiency, Sine Amplitude Converter FEATURES DESCRIPTION The VI Chip current multiplier is a high efficiency (> 95 %) 48 Vdc to 12 Vdc 10 A current multiplier Sine Amplitude Converter (SAC) operating from a - Operating from standard 48 V or 24 V PRMmodules 26 t o 55 Vdc primary bus to deliver an isolated output. High efficiency (> 95 %) reduces system power The Sine Amplitude Converter offers a low AC impedance consumption beyond the bandwidth of most downstream regulators, which 3 means that capacitance normally at the load can be located High density ( 901 W /in ) at the input to the Sine Amplitude Converter. Since the K factor Half Chip VI Chip package enables surface mount, of the VTM48EH120T010B00 is 1/4 , that capacitance value can low impedance interconnect to system board be reduced by a factor of 16 , resulting in savings of board area, materials and total system cost. Contains built-in protection features against: - Overvoltage The VTM48EH120T010B00 is provided in a VI Chip package compatible with standard pick-and-place and surface mount - Overcurrent assembly processes. The co-molded VI Chip package provides - Short Circuit enhanced thermal management due to large thermal interface - Overtemperature area and superior thermal conductivity. With high conversion Provides enable / disable control, internal temperature efficiency the VTM48EH120T010B00 increases overall system monitoring, current monitoring efficiency and lowers operating costs compared to conventional approaches. ZVS / ZCS resonant Sine Amplitude Converter topology The VTM48EH120T010B00 enables the utilization of Factorized Less than 50C temperature rise at full load Power Architecture providing efficiency and size benefits by in typical applications lowering conversion and distribution losses and promoting high density point of load conversion. TYPICAL APPLICATIONS High End Computing Systems V = 26 to 55 V I = 10 A (NOM) IN OUT Automated T est Equipment V = 6.5 to 13.8 V(NO LOAD) K= 1/4 OUT High Density Power Supplies Communications Systems PART NUMBERING 0 PART NUMBER PRODUCT GRADE T = -40 to 125C VTM48 E H120 x 010 B00 M = -55 to 125C For Storage and Operating Temperatures see Section 6.0 General Characteristics Regulator Current Multiplier VC PC IM PR SG VC TM OS PC CD L TM IL O (See Application Note AN:024) PRM VTM A +In +Out +In +Out D V IN -Out -Out -In -In Factorized Power Architecture VTM Current Multiplier Rev 1.3 Page 1 of 16 01/2021VTM48 E H 120 x 010 B00 1.0 ABSOLUTE MAXIMUM VOLTAGE RATINGS The absolute maximum ratings below are stress ratings only. Operation at or beyond these maximum ratings can cause permanent damage to the device. MIN MAX UNIT MIN MAX UNIT + IN to - IN . -1.0 60 V IM to - IN................................................. 0 3.15 V DC DC PC to - IN -0.3 20 V + IN / - IN to + OUT / - OUT (hipot)........ 2250 V DC DC TM to -IN -0.3 7 V + OUT to - OUT....................................... -1.0 16 V DC DC VC to - IN -0.3 20 V DC 2.0 ELECTRICAL CHARACTERISTICS Specifications apply over all line and load conditions unless otherwise noted Boldface specifications apply over the temperature range of -40C < T < 125C (T-Grade) All other specifications are at T = 25C unless otherwise noted. J J ATTRIBUTE SYMBOL CONDITIONS / NOTES MIN TYP MAX UNIT No external VC applied 26 55 Input Voltage Range V V IN DC VC applied 0 55 V Slew Rate dV /dt 1 V/s IN IN Module latched shutdown, V UV Turn Off V 19.2 26.0 V IN IN UV No external VC applied, I = 10 A OUT V = 48 V 0.8 4.1 IN V = 26 V to 55 V 5 IN No Load power dissipation P W NL V = 48 V, T = 25C 2.0 2.8 IN C V = 26 V to 55 V, T = 25C 4 IN C VC enable, V = 48 V C = 500 F, IN OUT Inrush current peak I 8 12 A INRP R = 1162 m LOAD DC input current I 2.7 A IN DC Transfer ratio K K = V /V , I = 0 A 1/4 V/V OUT IN OUT Output voltage V V = V K - I R , Section 11 V OUT OUT IN OUT OUT Output current (average) I 10 A OUT AVG Output current (peak) I T < 10 ms, I 10 A 12.5 A OUT PK PEAK OUT AVG Output power (average) P I 10 A 135 W OUT AVG OUT AVG V = 48 V, I = 10 A 93.5 94.7 IN OUT V = 26 V to 55 V, I = 10 A 90.0 Efficiency (ambient) hAMB % IN OUT V = 48 V, I = 5 A 94.0 94.9 IN OUT h Efficiency (hot) V = 48 V, T = 100C, I = 10 A 92.6 94.1 % HOT IN C OUT h Efficiency (Over load range) 2 A < I < 10 A 72.0 % 20% OUT Output resistance (Cold) R T = -40C, I = 10 A 20.0 26.9 40.0 m OUT COLD C OUT Output resistance (Ambient) R T = 25C, I = 10 A 25 38.3 50.0 m OUT AMB C OUT Output resistance (Hot) R T = 100C, I = 10 A 30.0 47.1 60.0 m OUT HOT C OUT Switching frequency F 1.40 1.50 1.60 MHz SW Output ripple frequency F 2.80 3.00 3.20 MHz SW RP C = 0 F, I = 10 A, V = 48 V, OUT OUT IN Output voltage ripple V 200 400 mV OUT PP 20 MHz BW, Section 12 Frequency up to 30 MHz, Output inductance (parasitic) L 600 pH OUT PAR Simulated J-lead model Output capacitance (internal) C V = 12 V 20 F OUT INT OUT VTM Standalone Operation Output capacitance (external) COUT EXT 500 F V pre-applied, VC enable IN PROTECTION OVLO V Module latched shutdown 55.1 58.7 60 V IN OVLO+ Overvoltage lockout T Effective internal RC filter 2.4 s OVLO response time Output overcurrent trip I 12 19 24 A OCP Short circuit protection trip current I 24 A SCP Output overcurrent response T Effective internal RC filter (Integrative). 5.3 ms OCP time constant From detection to cessation Short circuit protection response time T 1 s SCP of switching (Instantaneous) Thermal shutdown setpoint T 125 130 135 C J OTP VTM Current Multiplier Rev 1.3 Page 2 of 16 01/2021