V23990P849A48PM Vincotech

V23990-P849-*4*-PM rd 1200V/8A flow PIM 0 3 gen rd Features flow PIM 0 3 gen 2 Clips housing in 12 and 17mm height Trench Fieldstop Technology IGBT4 Optional w/o BRC Target Applications Industrial Drives Schematic Embedded Generation Types V23990-P849-A48-PM 12mm housing V23990-P849-A49-PM 17mm housing V23990-P849-C48-PM 12mm housing w/o BRC V23990-P849-C49-PM 17mm housing w/o BRC Maximum Ratings T =25C, unless otherwise specified j Parameter Symbol Condition Value Unit Input Rectifier Diode Repetitive peak reverse voltage V 1600 V RRM T =80C h 27 I T =T max DC forward current FAV j j A T =80C 30 c Surge forward current I 220 A FSM t =10ms T =25C p j 2 2 I2t-value 200 I t A s T =80C 33 h Power dissipation per Diode P T =T max W tot j j T =80C 50 c Maximum Junction Temperature T max 150 C j Inverter Transistor Collector-emitter break down voltage V 1200 V CE T =80C 13 h DC collector current I T =T max A C j j T =80C 16 c Pulsed collector current I t limited by T max 24 A Cpulse p j Turn off safe operating area VCE 1200V, Tj Top max 16 A T =80C 44 h P T =T max Power dissipation per IGBT W tot j j T =80C 67 c V Gate-emitter peak voltage 20 V GE t T 150C SC j 10 s Short circuit ratings V V =15V 800 V CC GE Maximum Junction Temperature T max 175 C j Copyright by Vincotech 1 Revision: 5V23990-P849-*4*-PM Maximum Ratings T =25C, unless otherwise specified j Parameter Symbol Condition Value Unit Inverter Diode Peak Repetitive Reverse Voltage V 1200 V RRM T =80C 20 h DC forward current I T =T max A F j j T =80C 20 c Repetitive peak forward current I t limited by T max 20 A FRM p j T =80C 35 h P T =T max Power dissipation per Diode W tot j j T =80C 54 c Maximum Junction Temperature T max 175 C j Brake Transistor 1200 Collector-emitter break down voltage V V CE T =80C 8 h I T =T max DC collector current A C j j T =80C 10 c I t limited by T max Pulsed collector current 12 A Cpuls p j Turn off safe operating area VCE 1200V, Tj Top max 8 A T =80C h 32 P T =T max Power dissipation per IGBT tot j j W T =80C 49 c Gate-emitter peak voltage V 20 V GE t T 150C 10 s SC j Short circuit ratings V V =15V 360 V CC GE T max Maximum Junction Temperature 175 C j Brake Diode 1200 Peak Repetitive Reverse Voltage V V RRM T =80C 6 h DC forward current I T =T max A F j j T =80C 6 c Repetitive peak forward current I t limited by T max 6 A FRM p j T =80C 18 h Power dissipation per Diode P T =T max W tot j j T =80C c 27 T max Maximum Junction Temperature j 150 C Thermal Properties Storage temperature T -40+125 C stg T Operation temperature under switching condition -40+(Tjmax - 25) C op Insulation Properties Insulation voltage V t=2s DC voltage 4000 V is Creepage distance min 12,7 mm Clearance min 12,7 mm Comparative tracking index CTI >200 Copyright by Vincotech 2 Revision: 5