VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.1 A FEATURES Low profile, axial leaded outline High frequency operation Very low forward voltage drop Cathode Anode High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance DO-204AL Guard ring for enhanced ruggedness and long term reliability PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC Package DO-204AL (DO-41) Designed and qualified for commercial level I 1.1 A F(AV) Halogen-free according to IEC 61249-2-21 definition V 90 V, 100 V R (-M3 only) V at I See Electrical table F F I 1.0 mA at 125 C RM DESCRIPTION T max. 150 C J The VS-11DQ... axial leaded Schottky rectifier has been Diode variation Single die optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power E 1.0 mJ AS supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1.1 A F(AV) V 90/100 V RRM I t = 5 s sine 85 A FSM p V 1 Apk, T = 25 C 0.85 V F J T Range - 40 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-11DQ09 VS-11DQ09-M3 VS-11DQ10 VS-11DQ10-M3 UNITS Maximum DC reverse voltage V R 90 90 100 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 75 C, rectangular waveform 1.1 F(AV) C See fig. 4 A Maximum peak one cycle Following any rated load 5 s sine or 3 s rect. pulse 85 non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 14 See fig. 6 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 0.5 A, L = 8 mH 1.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 0.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 21-Sep-11 Document Number: 93207 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 1 A 0.85 T = 25 C J 2 A 0.96 Maximum forward voltage drop (1) V V FM See fig. 1 1 A 0.68 T = 125 C J 2 A 0.78 T = 25 C 0.5 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 1.0 J Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 35 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T - 40 to 150 C J Stg temperature range Maximum thermal resistance, DC operation R 100 thJA junction to ambient Without cooling fin C/W Typical thermal resistance, DC operation R 81 thJL junction to lead See fig. 4 0.33 g Approximate weight 0.012 oz. 11DQ09 Marking device Case style DO-204AL (DO-41) 11DQ10 Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 21-Sep-11 Document Number: 93207 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000