VS-12CWQ06FNPbF
Vishay Semiconductors
Schottky Rectifier, 2 x 6 A
Base FEATURES
common
cathode Popular D-PAK outline
4
Center tap configuration
Small foot print, surface mountable
Low forward voltage drop
2
High frequency operation
Common
cathode
D-PAK (TO-252AA)
Guard ring for enhanced ruggedness and long term
13
Anode Anode reliability
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Meets MSL level 1, per J-STD-020, LF maximum peak of
Package D-PAK (TO-252AA)
260 C
I 2 x 6 A
F(AV)
DESCRIPTION
V 60 V
R
The VS-12CWQ06FNPbF surface mount, center tap,
V at I 0.57 V
F F
Schottky rectifier series has been designed for applications
I 35 mA at 125 C
RM
requiring low forward drop and small foot prints on PC
T max. 150 C
J
board. Typical applications are in disk drives, switching
Diode variation Common cathode
power supplies, converters, freewheeling diodes, battery
E 7 mJ charging, and reverse battery protection.
AS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 12 A
F(AV)
V 60 V
RRM
I t = 5 s sine 320 A
FSM p
V 6 Apk, T = 125 C (per leg) 0.57 V
F J
T Range - 55 to 150 C
J
VOLTAGE RATINGS
PARAMETER SYMBOL VS-12CWQ06FNPbF UNITS
Maximum DC reverse voltage V
R
60 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum average
per leg 6
forward current I 50 % duty cycle at T = 131 C, rectangular waveform A
F(AV) C
per device 12
See fig. 5
Maximum peak one cycle Following any rated
5 s sine or 3 s rect. pulse 320
non-repetitive surge current I load condition and with A
FSM
10 ms sine or 6 ms rect. pulse 105
See fig. 7 rated V applied
RRM
Non-repetitive avalanche energy per leg E T = 25 C, I = 1.2 A, L = 10 mH 7 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current per leg I 0.8 A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Document Number: 94134 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VS-12CWQ06FNPbF
Schottky Rectifier, 2 x 6 A
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
6 A 0.61
T = 25 C
J
Maximum forward
12 A 0.79
(1)
voltage drop per leg V V
FM
6 A 0.57
See fig. 1
T = 125 C
J
12 A 0.72
Maximum reverse
T = 25 C 3
J
(1)
leakage current per leg I V = Rated V mA
RM R R
T = 125 C 35
See fig. 2 J
Threshold voltage V 0.36 V
F(TO)
T = T maximum
J J
Forward slope resistance r 24.14 m
t
Typical junction capacitance per leg C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 360 pF
T R DC
Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.0 nH
S
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
(1)
T , T - 55 to 150 C
J Stg
temperature range
per leg 3.0
Maximum thermal resistance, DC operation
R C/W
thJC
junction to case See fig. 4
per device 1.5
0.3 g
Approximate weight
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA) 12CWQ06FN
Note
dP
tot 1
(1)
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT R
J thJA
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94134
2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 14-Jan-11