1N2133A thru 1N2138AR V = 300 V - 600 V RRM Silicon Standard I =60 A F Recovery Diode Features High Surge Capability DO-5 Package Types from 300 V to 600 V V RRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Conditions 1N2133A(R) 1N2135A(R) 1N2137A(R) 1N2138A(R) Unit Repppetitive peak reverse voltagge V 300 400 500 600 V RRM V 350 420 RMS reverse voltage 210 280 V RMS V 50 100 150 200 V DC blocking voltage DC I T 150 C Continuous forward current 60 60 60 60 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 1050 1050 1050 1050 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 C j T -55 to 150 -55 to 150 Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions 1N2137A(R) 1N2138A(R) Parameter Symbol 1N2133A(R) 1N2135A(R) Unit V I = 60 A, T = 25 C 1.1 1.1 V Diode forward voltage F F j 1.1 1.1 V = 50 V, T = 25 C 10 10 R j 10 10 A I Reverse current R V = 50 V, T = 150 C 15 15 15 15 mA R j Thermal characteristics Thermal resistance, junction - R 0.65 0.65 0.65 0.65 C/W thJC case 1 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/1N2133A thru 1N2138AR 2 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/