1N4148W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES These diodes are also available in other case styles including the DO-35 case with the type designation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT-23 case with the type designation IMBD4148-V. Silicon epitaxial planar diode Fast switching diodes AEC-Q101 qualified Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: GS18/10K per 13 reel (8 mm tape), 10K/box GS08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 75 V R Repetitive peak reverse voltage V 100 V RRM Average rectified current half wave f 50 Hz I 150 mA F(AV) (1) rectification with resistive load Surge forward current t < 1 s and T = 25 C I 500 mA j FSM (1) Power dissipation P 350 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 375 K/W thJA Junction temperature T 150 C j Storage temperature T - 65 to + 150 C stg Note (1) Valid provided that electrodes are kept at ambient temperature. Rev. 1.5, 27-Jul-12 Document Number: 85748 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 910001N4148W-V www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 10 mA V 1000 mV F F Forward voltage I = 100 mA V 1200 mV F F V = 20 V I 25 nA R R V = 75 V I 5A R R Leakage current V = 100 V I 100 A R R V = 20 V, T = 150 C I 50 A R J R Diode capacitance V = V = 0 V C 4pF F R D Tested with 50 mA pulses, Voltage rise when switching ON t = 0.1 s, rise time < 30 ns, V 2.5 V p fr f = (5 to 100) kHz p I = 10 mA, i = 1 mA, V = 6 V, F R R Reverse recovery time t 4ns rr R = 100 L Rectification efficiency f = 100 MHz, V = 2 V 0.45 RF RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT 60 5 k 2 nF V = 2 V V RF O 17436 TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 4 3 10 10 T = 25 C 5 j f = 1 kHz 2 2 10 3 10 T = 100 C T = 25 C j j 5 10 2 2 10 5 1 2 10 -1 10 5 2 -2 10 -2 -1 2 0 1 2 10 1011100 17437 V (V) 17438 I (mA) F F Fig. 1 - Forward Characteristics Fig. 2 - Dynamic Forward Resistance vs. Forward Current Rev. 1.5, 27-Jul-12 Document Number: 85748 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I (mA) F R () f