X-On Electronics has gained recognition as a prominent supplier of 1N4755A-TAP Zener Diodes across the USA, India, Europe, Australia, and various other global locations. 1N4755A-TAP Zener Diodes are a product manufactured by Vishay. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

1N4755A-TAP Vishay

1N4755A-TAP electronic component of Vishay
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Part No.1N4755A-TAP
Manufacturer: Vishay
Category: Zener Diodes
Description: Zener Diodes 43 Volt 1.3 Watt
Datasheet: 1N4755A-TAP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25000: USD 0.0454 ea
Line Total: USD 1135 
Availability - 0
MOQ: 25000  Multiples: 25000
Pack Size: 25000
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 25000
Multiples : 25000
25000 : USD 0.0701
50000 : USD 0.0689
75000 : USD 0.0683
100000 : USD 0.0675
125000 : USD 0.0669
150000 : USD 0.0663
200000 : USD 0.0655
250000 : USD 0.0649
500000 : USD 0.0643

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 25000
Multiples : 25000
25000 : USD 0.0454
50000 : USD 0.0442

   
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RoHS - XON
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Vz - Zener Voltage
Voltage Tolerance
Zener Current
Pd - Power Dissipation
Zz - Zener Impedance
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Minimum Operating Temperature
Test Current
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Ir - Reverse Current
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We are delighted to provide the 1N4755A-TAP from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N4755A-TAP and other electronic components in the Zener Diodes category and beyond.

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33 3 1N4728A to 1N4764A www.vishay.com Vishay Semiconductors Zener Diodes FEATURES Silicon planar power Zener diodes For use in stabilizing and clipping circuits with high power rating Standard Zener voltage tolerance is 5 % AEC-Q101 qualified Material categorization: for definitions of compliance please se e www.vishay.com/doc 99912 APPLICATIONS DESIGN SUPPORT TOOLS AVAILABLE Voltage stabilization 3D Models PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V range nom. 3.3 to 100 V Z 2.5 to 76 mA Test current I ZT V specification Thermal equilibrium Z Circuit configuration Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY 1N4728A to 1N4764A 1N4728A to 1N4764A -series-TR 5000 per 13 reel 25 000/box 5000 per ammopack 1N4728A to 1N4764A 1N4728A to 1N4764A-series-TAP 25 000/box (52 mm tape) PACKAGE MOLDING COMPOUND MOISTURE SENSITIVITY PACKAGE NAME WEIGHT SOLDERING CONDITIONS FLAMMABILITY RATING LEVEL MSL level 1 DO-41 (DO-204AL) 310 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Valid provided that leads at a distance of 4 mm Power dissipation P 1300 mW tot from case are kept at ambient temperature Zener current I P /V mA Z V Z Valid provided that leads at a distance of 4 mm Thermal resistance junction to ambient air R 110 K/W thJA from case are kept at ambient temperature T Junction temperature 175 C j Storage temperature range T -65 to +175 C stg Forward voltage (max.) I = 200 mA V 1.2 V F F Rev. 2.5. 12-Mar-2019 Document Number: 85816 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD D 1N4728A to 1N4764A www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb DYNAMIC ZENER VOLTAGE TEST REVERSE LEAKAGE SURGE REGULATOR RESISTANCE (3) (2) (1) CURRENT CURRENT CURRENT CURRENT RANGE f = 1 kHz PART V at I I I I at V Z at I Z at I I I NUMBER Z ZT1 ZT1 ZT2 R R ZT ZT1 ZK ZT2 R ZM V mA mA A V mA mA NOM. MAX. TYP. MAX. MAX. 1N4728A 3.3 76 1 100 1 10 400 1380 276 1N4729A 3.6 69 1 100 1 10 400 1260 252 1N4730A 3.9 64 1 50 1 9 400 1190 234 1N4731A 4.3 58 1 10 1 9 400 1070 217 1N4732A 4.7 53 1 10 1 8 500 970 193 1N4733A 5.1 49 1 10 1 7 550 890 178 1N4734A 5.6 45 1 10 2 5 600 810 162 1N4735A 6.2 41 1 10 3 2 700 730 146 1N4736A 6.8 37 1 10 4 3.5 700 660 133 1N4737A 7.5 34 0.5 10 5 4 700 605 121 1N4738A 8.2 31 0.5 10 6 4.5 700 550 110 1N4739A 9.1 28 0.5 10 7 5 700 500 100 1N4740A 10 25 0.25 10 7.6 7 700 454 91 1N4741A 11 23 0.25 5 8.4 8 700 414 83 1N4742A 12 21 0.25 5 9.1 9 700 380 76 1N4743A 13 19 0.25 5 9.9 10 700 344 69 1N4744A 15 17 0.25 5 11.4 14 700 304 61 1N4745A 16 15.5 0.25 5 12.2 16 700 285 57 1N4746A 18 14 0.25 5 13.7 20 750 250 50 1N4747A 20 12.5 0.25 5 15.2 22 750 225 45 1N4748A 22 11.5 0.25 5 16.7 23 750 205 41 1N4749A 24 10.5 0.25 5 18.2 25 750 190 38 1N4750A 27 9.5 0.25 5 20.6 35 750 170 34 1N4751A 30 8.5 0.25 5 22.8 40 1000 150 30 1N4752A 33 7.5 0.25 5 25.1 45 1000 135 27 1N4753A 36 7 0.25 5 27.4 50 1000 125 25 1N4754A 39 6.5 0.25 5 29.7 60 1000 115 23 1N4755A 43 6 0.25 5 32.7 70 1500 110 22 1N4756A 47 5.5 0.25 5 35.8 80 1500 95 19 1N4757A 51 5 0.25 5 38.8 95 1500 90 18 1N4758A 56 4.5 0.25 5 42.6 110 2000 80 16 1N4759A 62 4 0.25 5 47.1 125 2000 70 14 1N4760A 68 3.7 0.25 5 51.7 150 2000 65 13 1N4761A 75 3.3 0.25 5 56 175 2000 60 12 1N4762A 82 3 0.25 5 62.2 200 3000 55 11 1N4763A 91 2.8 0.25 5 69.2 250 3000 50 10 1N4764A 100 2.5 0.25 5 76 350 3000 45 9 Notes (1) Based on DC measurement at thermal equilibrium while maintaining the lead temperature (T ) at 30 C + 1 C, 9.5 mm (3/8 ) from the L diode body (2) Valid provided that electrodes at a distance of 4 mm from case are kept at ambient temperature (3) t = 10 ms. p Rev. 2.5. 12-Mar-2019 Document Number: 85816 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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