VS-20BQ030PbF Vishay High Power Products Schottky Rectifier, 2 A FEATURES Small foot print, surface mountable Very low forward voltage drop High frequency operation Cathode Anode Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of SMB 260 C Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level DESCRIPTION PRODUCT SUMMARY The VS-20BQ030PbF surface mount Schottky rectifier has I 2.0 A F(AV) been designed for applications requiring low forward drop V 30 V R and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 2.0 A F(AV) V 30 V RRM I t = 5 s sine 350 A FSM p V 2.0 Apk, T = 125 C 0.37 V F J T Range - 55 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-20BQ030PbFUNITS Maximum DC reverse voltage V R 30 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 119 C, rectangular waveform 2.0 F(AV) L Following any rated load 5 s sine or 3 s rect. pulse 350 A Maximum peak one cycle I condition and with rated FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 80 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 6 mH 3.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 94157 For technical questions, contact: diodestech vishay.com www.vishay.com Revision: 04-Mar-10 1 VS-20BQ030PbF Schottky Rectifier, 2 A Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 2 A 0.470 T = 25 C J 4 A 0.550 (1) Maximum forward voltage drop V V FM 2 A 0.370 T = 125 C J 4 A 0.470 T = 25 C 0.5 J (1) Maximum reverse leakage current I V = Rated V mA RM R R T = 125 C 15 J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 200 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and (1) T , T - 55 to 150 C J Stg storage temperature range Maximum thermal resistance, (2) R DC operation 25 thJL junction to lead C/W Maximum thermal resistance, R 80 thJA junction to ambient 0.10 g Approximate weight 0.003 oz. Marking device Case style SMB (similar DO-214AA) V2E Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB www.vishay.com For technical questions, contact: diodestech vishay.com Document Number: 94157 2 Revision: 04-Mar-10