VS-MB High Voltage Series www.vishay.com Vishay Semiconductors Single Phase Bridge (Power Modules), 25 A/35 A FEATURES Universal, 3 way terminals: push-on, wrap around or solder RoHS COMPLIANT High thermal conductivity package, electrically insulated case Center hole fixing Excellent power/volume ratio Nickel plated terminals solderable using lead (Pb)-free solder solder alloy Sn/Ag/Cu (SAC305) solder temperature 260 C to 275 C UL E300359 approved D-34 Designed and qualified for industrial and consumer level Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY I 25 A to 35 A O DESCRIPTION V 1400 V to 1600 V RRM A range of extremely compact, encapsulated single phase Package D-34 bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and Circuit Single Phase Bridge instrumentation applications. MAJOR RATINGS AND CHARACTERISTICS VALUES VALUES SYMBOL CHARACTERISTICS UNITS 26MB-A 36MB-A 25 35 A I O 70 55 C T C 50 Hz 400 475 I A FSM 60 Hz 420 500 50 Hz 790 1130 2 2 I t A s 60 Hz 725 1030 V Range 1400 to 1600 V RRM T - 55 to 150 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM TYPE VOLTAGE PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T MAXIMUM J NUMBER CODE V V mA 26MB..A 140 1400 1500 2 36MB..A 160 1600 1700 Revision: 10-Jul-13 Document Number: 93564 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MB High Voltage Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION VALUES VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS 26MB-A 36MB-A Resistive or inductive load 25 35 A Maximum DC output current I Capacitive load 20 28 O at case temperature 65 60 C t = 10 ms 400 475 No voltage reapplied t = 8.3 ms 420 500 Maximum peak, one cycle I A FSM non-repetitive forward current t = 10 ms 335 400 100 % V RRM reapplied t = 8.3 ms 350 420 Initial T = T maximum J J t = 10 ms 790 1130 No voltage reapplied t = 8.3 ms 725 1030 2 2 2 Maximum I t for fusing I t A s t = 10 ms 560 800 100 % V RRM reapplied t = 8.3 ms 512 730 2 2 I t for time t = I t x t 2 2 x x 2 Maximum I t for fusing I t 5.6 11.3 kA s 0.1 t 10 ms, V = 0 V x RRM (16.7 % x x I < I < x I ), F(AV) F(AV) Low level of threshold voltage V 0.70 0.74 F(TO)1 T maximum J V High level of threshold voltage V (I > x I ), T maximum 0.75 0.79 F(TO)2 F(AV) J (16.7 % x x I < I < x I ), F(AV) F(AV) Low level forward slope resistance r 7.0 5.5 t1 T maximum J m High level forward slope resistance r (I > x I ), T maximum 6.4 5.2 t2 F(AV) J T = 25 C, I = 40 A (26MB) J FM pk Maximum forward voltage drop V t = 400 s 1.25 1.3 V FM p T = 25 C, I = 55 A (36MB) J FM pk Maximum DC reverse current per diode I T = 25 C, at V 10 10 A RRM J RRM RMS isolation voltage base plate V f = 50 Hz, t = 1 s 2700 2700 V ISOL THERMAL AND MECHANICAL SPECIFICATIONS VALUES VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS 26MB-A 36MB-A Junction and storage , T - 55 to 150 C T J Stg temperature range Maximum thermal resistance, R 1.7 1.35 thJC junction to case per bridge K/W Maximum thermal resistance, Mounting surface, smooth, flat and greased 0.2 R thCS case to heatsink Mounting torque 10 % Bridge to heatsink 2.0 Nm Approximate weight 20 g Revision: 10-Jul-13 Document Number: 93564 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000