2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs Part Number V (V) V Min (V) g Min (mS) I Min (mA) GS(off) (BR)GSS fs DSS 2N4416 6 30 4.5 5 2N4416A 2.5 to 6 35 4.5 5 SST4416 6 30 4.5 5 Excellent High-Frequency Gain: Wideband High Gain High-Frequency Amplifier/Mixer 2N4416/A, Gps 13 dB (typ) Very High System Sensitivity Oscillator 400 MHz High Quality of Amplification Sample-and-Hold Very Low Noise: 3 dB (typ) High-Speed Switching Capability Very Low Capacitance Switches 400 MHz High Low-Level Signal Amplification Very Low Distortion High AC/DC Switch Off-Isolation The 2N4416/2N4416A/SST4416 n-channel JFETs are The TO-206AF (TO-72) hermetically-sealed package is designed to provide high-performance amplification at high available with full military processing (see Military frequencies. Information.) The TO-236 (SOT-23) package provides a low-cost option and is available with tape-and-reel options (see Packaging Information). For similar products in the TO-226AA (TO-92) package, see the J304/305 data sheet. TO-206AF (TO-72) TO-236 (SOT-23) S C 1 4 D 1 3 G S 2 23 D G Top View Top View 2N4416 SST4416 (H1)* 2N4416A *Marking Code for TO-236 For applications information see AN104. Document Number: 70242 www.vishay.com S-04028Rev. F, 04-Jun-01 7-12N4416/2N4416A/SST4416 Vishay Siliconix Gate-Drain, Gate-Source Voltage : Operating Junction Temperature . 55 to 150 C (2N/SST4416) . 30 V a Power Dissipation : (2N Prefix) 300 mW (2N4416A) . 35 V b (SST Prefix) 350 mW Gate Current . 10 mA Lead Temperature . 300 C Notes Storage Temperature : (2N Prefix) 65 to 200 C a. Derate 2.4 mW/ C above 25 C (SST Prefix) . 65 to 150 C b. Derate 2.8 mW/ C above 25 C Limits 2N4416 2N4416A SST4416 a Parameter Symbol Test Conditions Typ Min Max Min Max Min Max Unit Static Gate-Source V I = 1 A , V = 0 V 36 30 35 30 (BR)GSS G DS Breakdown Voltage VV Gate-Source Cutoff Voltage V V = 15 V, I = 1 nA 3 6 2.5 6 6 GS(off) DS D b Saturation Drain Current I V = 15 V, V = 0 V 10 5 15 5 15 5 15 mA DSS DS GS V = 20 V, V = 0 V (2N) 2 100 100 pA GS DS T = 150 C 4 100 100 A Gate Reverse Current I GSS V = 15 V, V = 0 V (SST) 0.002 1 nA GS DS T = 125 C 0.6 A Gate Operating Current I V = 10 V, I = 1 mA 20 G DG D pA c Drain Cutoff Current I V = 10 V, V = 6 V 2 D(off) DS GS c Drain-Source On-Resistance r V = 0 V, I = 1 mA 150 DS(on) GS D Gate-Source V I = 1 mA , V = 0 V 0.7 V c GS(F) G DS Forward Voltage Dynamic Common-Source g 6 4.5 7.5 4.5 7.5 4.5 7.5 mS fs b Forward Transconductance VV = 15 V = 15 V,, V V = 0 V = 0 V DSDS GSGS f = 1 kHz Common-Source g 15 50 50 50 S b os Output Conductance Common-Source C 2.2 4 4 iss Input Capacitance Common-Source V = 15 V, V = 0 V DS GS C 0.7 0.8 0.8 pF rss Reverse Transfer Capacitance f = 1 MHz Common-Source C 1 2 2 oss Output Capacitance Equivalent Input V = 10 V, V = 0 V nV DS GS e 6 n c Noise Voltage f = 1 kHz Hz Document Number: 70242 www.vishay.com S-04028Rev. F, 04-Jun-01 7-2