VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A FEATURES Low profile, axial leaded outline High frequency operation Cathode Anode Very low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical C-16 strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Package DO-201AD (C-16) Designed and qualified for commercial level I 3.3 A Halogen-free according to IEC 61249-2-21 definition F(AV) (-M3 only) V 90 V, 100 V R V at I See Electrical table F F DESCRIPTION I max. 3.0 mA at 125 C RM The VS-31DQ... axial leaded Schottky rectifier has been T max. 150 C J optimized for very low forward voltage drop, with moderate Diode variation Single die leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse E 3.0 mJ AS battery protection MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 3.3 A F(AV) V 90/100 V RRM I t = 5 s sine 210 A FSM p V 3 Apk, T = 25 C 0.85 V F J T - 40 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-31DQ09 VS-31DQ09-M3 VS-31DQ10 VS-31DQ10-M3 UNITS Maximum DC reverse voltage V R 90 90 100 100 V Maximum working peak V RWM reverse voltage ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 108 C, rectangular waveform 3.3 F(AV) L See fig. 4 A Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 210 non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse V applied 34 RRM See fig. 6 Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 6 mH 3.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 0.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 19-Sep-11 Document Number: 93321 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 3 A 0.85 T = 25 C J 6 A 0.97 Maximum forward voltage drop (1) V V FM See fig. 1 3 A 0.69 T = 125 C J 6 A 0.80 T = 25 C 1 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 4 T = 125 C 3 J Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 110 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 9.0 nH S Maximum voltage rate of charge dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T - 40 to 150 C J Stg temperature range Maximum thermal resistance, DC operation R 80 thJA junction to ambient Without cooling fin C/W Typical thermal resistance, R DC operation 15 thJL junction to lead 1.2 g Approximate weight 0.042 oz. 31DQ09 Marking device Case style C-16 31DQ10 Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 19-Sep-11 Document Number: 93321 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000